Development of X-ray diffractomator to realize in-situ observation of crystal growth

研制X射线衍射仪实现晶体生长原位观察

• 批准号: 23360009
• 负责人: TABUCHI MASAO
• 金额: $ 13.06万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360009/
• 关键词: X線回折測定; その場観察; 結晶成長; 分光集光結晶; 回転機構排除; X線集光光学系; X線回折; X線散乱; その場測定; X線反射率測定; ヨハンソン分光結晶; 稼動部のない測定

Recently, surface and interface structures of advanced semiconductor devices should be controlled in an atomic scale, and the technique to investigate the real structures of the surfaces and interfaces is getting much important. In order to realize in-situ observation of the semiconductor device structures in conventional crystal growth system via X-ray diffraction and scattering measurements, a special X-ray diffractomator in which all the components, the X-ray source, the detector and the sample, were fixed was developed. A insident X-ray optics using two Johanson monochromator crystals were newly designed and developed to realize the in-situ observation with no motions. Using a compact vacuum chamber specially designed to use with the new optics, a evidence that semiconductor surfaces can really be observed using the system was obtained.

近年来，先进半导体器件的表面和界面结构需要在原子尺度上进行控制，研究表面和界面的真实的结构变得越来越重要。 为了在常规晶体生长系统中实现对半导体器件结构的X射线衍射和散射测量的原位观察，研制了一种专用的X射线衍射仪。 设计并研制了一种利用两块Johanson单色晶体实现原位无运动观测的X射线光学系统。 使用一个紧凑的真空室专门设计用于与新的光学，证据表明，半导体表面确实可以使用该系统进行观察。

项目成果

GaAs に吸着したCs が作るNEA 表面のXAFS測定

XAFS 测量由吸附在 GaAs 上的 Cs 形成的 NEA 表面

• 发表时间: 2012
• 作者: 坪田光治;恵良淳史;田渕雅夫;竹田美和;西谷智博
• 通讯作者: 西谷智博

Analysis of Cs/GaAs NEA surface by XAFS

通过 XAFS 分析 Cs/GaAs NEA 表面

• 发表时间: 2013
• 期刊: J. Phys. : Conf. Ser.
• 作者: K.Tsubota;M.Tabuchi;T.Nishitani;A.Era;Y.Takeda
• 通讯作者: Y.Takeda

Evaluation of newly developed X-ray diffractometer equipped with Johansson monochromator

新开发的配备 Johansson 单色仪的 X 射线衍射仪的评估

• 发表时间: 2011
• 期刊: IOP Conf. Ser.
• 作者: M.Tabuchi;H.Tameoka;T.Kawase;and Y.Takeda
• 通讯作者: and Y.Takeda

GaAs(110)基板上に作製したCs/GaAs-NEA表面

GaAs(110) 衬底上制备的 Cs/GaAs-NEA 表面

• 发表时间: 2012
• 作者: Rui Masuda;Rie Togashi;Hisashi Murakami;Yoshinao Kumagai;Akinori Kouikitu;坪田光治
• 通讯作者: 坪田光治

Development of X-ray diffractometer for in-situ observation of thin-film crystal growth equipped with focusing monochromator

配备聚焦单色仪的薄膜晶体生长原位观察X射线衍射仪的研制

• DOI: 10.1002/pssc.201000508
• 发表时间: 2011
• 期刊: Physica Status Solidi(c)
• 作者: H. Tameoka;T. Kawase;M. Tabuchi;and Y. Takeda
• 通讯作者: and Y. Takeda