Development of X-ray diffractomator to realize in-situ observation of crystal growth

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Recently, surface and interface structures of advanced semiconductor devices should be controlled in an atomic scale, and the technique to investigate the real structures of the surfaces and interfaces is getting much important. In order to realize in-situ observation of the semiconductor device structures in conventional crystal growth system via X-ray diffraction and scattering measurements, a special X-ray diffractomator in which all the components, the X-ray source, the detector and the sample, were fixed was developed. A insident X-ray optics using two Johanson monochromator crystals were newly designed and developed to realize the in-situ observation with no motions. Using a compact vacuum chamber specially designed to use with the new optics, a evidence that semiconductor surfaces can really be observed using the system was obtained.