Study on Spin-Polarized Light-Emitting Diodes using Ferromagnetic/Semiconducting Nanowire Hybrids on Si Substrate

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We realized vertical free-standing semiconducting nanowires (NW) hybridized with ferromagnetic MnAs nanoclusters (NC), which enables us to confine carriers one-dimensionally and control carrier spins, by utilizing our unique selective-area growth method. The dependences of MnAs NC formation on various NW templates were investigated. We observed that MnAs layers were grown on the top {111}B surface of InAs NWs with a diameter of about 80 nm, and into the host NWs from the side walls to form MnAs/InAs hetero-junctions, which enable us to realize spin-carrier injection to NWs, and in which most of the c-axes of hexagonal NiAs-type MnAs layers were approximately parallel to the <111>B directions of InAs NWs. We developed two-terminal device processes to realize spin-polarized light-emitting diodes. I-V characteristics of the prototype MnAs/GaAs hybrid NWs showed p-type conductivity possibly owing to thermal diffusion of Mn atoms into the host GaAs NW surfaces during the MnAs NC formation.