Study on Spin-Polarized Light-Emitting Diodes using Ferromagnetic/Semiconducting Nanowire Hybrids on Si Substrate

硅衬底上铁磁/半导体纳米线混合体自旋偏振发光二极管的研究

• 批准号: 23360129
• 负责人: HARA Shinjiro
• 金额: $ 12.56万
• 依托单位: Hokkaido University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360129/
• 关键词: 半導体ナノワイヤ; 強磁性体ナノ構造; 選択成長; スピン偏極発光素子; ボトムアップ形成; 複合ナノ構造; 半導体ナノテクノロジ; スピントロニクス

We realized vertical free-standing semiconducting nanowires (NW) hybridized with ferromagnetic MnAs nanoclusters (NC), which enables us to confine carriers one-dimensionally and control carrier spins, by utilizing our unique selective-area growth method. The dependences of MnAs NC formation on various NW templates were investigated. We observed that MnAs layers were grown on the top {111}B surface of InAs NWs with a diameter of about 80 nm, and into the host NWs from the side walls to form MnAs/InAs hetero-junctions, which enable us to realize spin-carrier injection to NWs, and in which most of the c-axes of hexagonal NiAs-type MnAs layers were approximately parallel to the <111>B directions of InAs NWs. We developed two-terminal device processes to realize spin-polarized light-emitting diodes. I-V characteristics of the prototype MnAs/GaAs hybrid NWs showed p-type conductivity possibly owing to thermal diffusion of Mn atoms into the host GaAs NW surfaces during the MnAs NC formation.

我们实现了垂直独立的半导体纳米线（NW）与铁磁MnAs纳米团簇（NC）的杂交，这使我们能够限制载流子一维和控制载流子自旋，通过利用我们独特的选择性区域生长方法。MnAs NC形成的各种NW模板的依赖性进行了研究。我们观察到MnAs层生长在直径约为80 nm的InAs纳米线的{111}B表面上，并从侧壁进入主体纳米线，形成MnAs/InAs异质结，这使得我们能够实现自旋载流子注入纳米线，并且六角NiAs型MnAs层的大部分c轴近似平行于<111>InAs纳米线的B方向。我们开发了双端器件工艺来实现自旋偏振发光二极管。原型MnAs/GaAs混合纳米线的I-V特性显示出p型导电性，这可能是由于MnAs NC形成过程中锰原子热扩散到宿主GaAs纳米线表面所致。

项目成果

Magnetotransport Measurements on Individual MnAs Nanoclusters and Nanocluster Arrangements

单个 MnAs 纳米团簇和纳米团簇排列的磁输运测量

• 作者: Y. Kohashi;S. Hara;J. Motohisa;Shinjiro Hara;Kyohei Kabamoto;Toshihiro Wada;Shinya Sakita;Shinya Sakita;Hiroaki Kato;Martin Fischer
• 通讯作者: Martin Fischer

Control of Diameter and Pitch of InGaAs Nanowire Arrays in Selective-area Metalorganic Vapor Phase Epitaxy

选区金属有机气相外延中 InGaAs 纳米线阵列直径和节距的控制

• 发表时间: 2012
• 作者: T. Wada;Y. Kohashi;S. Hara and J. Motohisa;Y. Kohashi
• 通讯作者: Y. Kohashi

Growth and Characterization of AlGaAs Nanowires on Insulating Al2O3 Layers by Selective-Area Metal-Organic Vapor-Phase Epitaxy

选择性区域金属有机气相外延法在绝缘 Al2O3 层上生长 AlGaAs 纳米线并表征

• 作者: Noboru Niguchi;and Katsuhiro Hirata;Shinya Sakita
• 通讯作者: Shinya Sakita

Fabrication of III-V Nanowire-based Surrounding-Gate Transistors on Si Substrate

Si 衬底上基于 III-V 纳米线的环栅晶体管的制造

• 发表时间: 2011
• 作者: Katsuhiro Tomioka;Junichi Motohisa;Shinjiroh Hara;Takashi Fukui
• 通讯作者: Takashi Fukui

Formation of Vertical MnAs/InAs Heterojunction Nanowires (Invited Paper)

垂直MnAs/InAs异质结纳米线的形成（特邀论文）

• 发表时间: 2014
• 作者: Y. Kohashi;S. Hara;J. Motohisa;Yuta Kobayashi;Shinjiro Hara;Matthias Thomas Elm;Kyohei Kabamoto;Ryutaro Kodaira;Toshihiro Wada;Hiroki Kameda;Ryutaro Kodaira;Toshihiro Wada;Shinjiro Hara
• 通讯作者: Shinjiro Hara