Development of High Temperature and Rare-Earth Less Superconducting Thin Films by Controlling (Cu, C)-based Artificial Multi-layer Structure

控制(Cu,C)基人工多层结构开发高温少稀土超导薄膜

• 批准号: 23360139
• 负责人: TERADA NORIO
• 金额: $ 12.48万
• 依托单位: Kagoshima University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360139/
• 关键词: 超伝導材料・素子; 表面・界面物性; 薄膜; 強相関エレクトロニクス; 量子エレクトロニクス; レアアース・レス

The investigation of structural origin and the development of practical growth technique of the (Cu, C)-1201 rare-earth element free, superconducting films have been performed. The compressive interfacial strain at the top and bottom of the 1201 layer is a dominant factor for the emergence of superconductivity, which is optimized by controlling thickness of the over- and under-layers grown in the strained epitaxial-mode. The optimization yields an emergence of superconductivity on the ultra-thin 1201 layer. The repeating growth of this layered structure is a promising method for improving the critical current density per unit width. The emergence of superconductivity has been also confirmed on the films grown by the co-deposition of all of the constituents. As mentioned above, the fundamentals for the growth of the rare-earth free superconducting film and the foothold for practical growth techniques are established, which means the objective of this research is successfully achieved.

已经进行了（CU，C）-1201的实用生长技术的结构起源的研究和无稀土元件的实用生长技术的研究。 1201层顶部和底部的压缩界面应变是超导性出现的主要因素，该因素通过控制在紧张的表达模式中生长的过层和下层层的厚度进行了优化。优化产生了超导1201层上超导性的出现。这种分层结构的重复生长是提高单位宽度临界电流密度的有前途方法。通过所有成分的共沉积所生长的电影，也证实了超导性的出现。如上所述，建立了稀土自由超导膜的增长和实践增长技术的立足的基本原理，这意味着成功实现了这项研究的目标。

项目成果

Effects of Geometrical Spin Frustration on Triangular Spin Tubes Formed in CsCrF_4 and α-KCrF_4

几何自旋挫败对CsCrF_4和α-KCrF_4中形成的三角形自旋管的影响

• DOI: 10.1143/jpsj.80.084714
• 发表时间: 2011
• 期刊: Journal of the Physical Society of Japan
• 影响因子: 1.7
• 作者: H.Manaka;T.Etoh;Y.Honda;N.Iwashita;K.Ogata;N.Terada;T.Hisamatsu;M.Ito;Y.Narumi;A.Kondo;K Kindo;Y.Miura
• 通讯作者: Y.Miura

In(S, O)/CIGS 界面の電子構造評価

In(S, O)/CIGS界面的电子结构评估

• 发表时间: 2012
• 作者: （ 寺田 教男）;小原 幸三;奥田 哲治
• 通讯作者: 奥田 哲治

Study of Electric-Potential Profile in Microcrystalline Si Solar Cells by Cross-Sectional of by Kelvin Probe Force Microscopy

开尔文探针力显微镜横截面研究微晶硅太阳能电池的电势分布

• 发表时间: 2012
• 作者: Takayoshi Shiota;Tomoyuki Takada;Yoshiaki Takeuchi;Shinya Nakano;Akira Koga;Kozo Obara;Tetsuji Okuda and Norio Terada
• 通讯作者: Tetsuji Okuda and Norio Terada

CHARACTERIZATION OF BAND ALIGNMENT AT BUFFER/ABSORBER INTERFACES AND GRAIN BOUNDARIES IN CIGS-BASED SOLAR CELLS

CIGS 太阳能电池缓冲/吸收界面和晶界处能带排列的表征

• 发表时间: 2011
• 期刊: Technical Digest of 21st International Photovoltaic Science and Engineering Conference
• 作者: N. Terada;A. Kirihara;T. Takahae;Y. Shiota;S. Niki;S. Ishizuka;H. Shibata;A. Yamada and K. Matsubara
• 通讯作者: A. Yamada and K. Matsubara

(Cu,C)系超伝導層を基幹とする積層構造における界面歪効果

基于(Cu,C)基超导层的层状结构中的界面应变效应

• 发表时间: 2014
• 作者: 酒瀬川 健人;古賀 慎一;団 一星;小原 幸三;真中 浩貴;田中 康資;伊豫 彰;Athinarayanan Sundaresan;常盤 和靖;寺田 教男
• 通讯作者: 寺田 教男