A study on phase change characteristics of Ge-Cu-Te alloy film for PCRAM

PCRAM用Ge-Cu-Te合金薄膜相变特性研究

• 批准号: 23360297
• 负责人: SUTOU Yuji
• 金额: $ 12.31万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360297/
• 关键词: 相変化メモリ; 不揮発性メモリ; アモルファス; 結晶化; 半導体メモリ; 反射率; 密度; 電気抵抗; 電子状態; 結晶化速度; 結晶成長

Phase change random access memory (PCRAM) has attracted much attention as a new class of non-volatile memories because of its low production cost and high scalability. PCRAM is operated by way of Joule heating to induce phase transition between high resistance amorphous (reset state) and low resistance crystalline (set state) phases of a phase change material (PCM). In this study, we proposed a new PCM, Ge-Cu-Te compounds, with high crystallization temperature and low melting point, and investigated their phase change behaviors and memory characteristics.We found that the GeCu2Te3 compound shows unique phase change characteristics, such as volume expansion by crystallization and reflectance increase by amorphization. Moreover, it was also found that the GeCu2Te3 compound shows a fast phase change speed. Therefore, the GCT film is strongly expected as a phase change material for PCRAM with low energy consumption, high data retention and fast writing speed.

相变随机存取存储器（PCRAM）作为一种新型的非易失性存储器，由于其低成本和高扩展性而备受关注。PCRAM通过焦耳加热来操作，以引起相变材料（PCM）的高电阻非晶（复位状态）和低电阻结晶（设置状态）相之间的相变。本文提出了一种新的相变材料Ge-Cu-Te化合物，并对其相变行为和存储特性进行了研究，发现GeCu_2 Te_3化合物具有独特的相变特性，如晶化引起的体积膨胀和非晶化引起的反射率增加。此外，还发现GeCu_2Te_3化合物显示出快的相变速度。因此，GCT薄膜作为相变材料，具有低能耗、高数据保持率和快写入速度的PCRAM具有很强的应用前景。

项目成果

Phase transition characteristics of GeCu2Te3 film

GeCu2Te3薄膜的相变特性

• 发表时间: 2013
• 作者: Y. Sutou;Y. Saito;and J. Koike;Y. Sutou
• 通讯作者: Y. Sutou

Study of GeCu_2Te_3 by Hard X-ray Photoelectron Spectroscopy

GeCu_2Te_3的硬X射线光电子能谱研究

• 发表时间: 2012
• 期刊: Proceeding of 24^<th> Symposium on Phase Change Oriented Science 2012
• 作者: 小林啓介;小畠雅明;齊藤雄太;須藤祐司;小池淳一
• 通讯作者: 小池淳一

不揮発性メモリ用相変化材料に関する研究

非易失性存储器相变材料的研究

• 发表时间: 2013
• 作者: Hideki Arai;Ryosuke Yamauchi;Takanori Kiguchi;Koji Koyama;Keisuke Kobayashi;Toshimasa Suzuki;Takao Sasagawa;Yushi Kato;Nobuo Tsuchimine;Susumu Kobayashi;Masahiko Mitsuhashi;Satoru Kaneko;Mamoru Yoshimoto;中村浩二，白石嵩人，堀田篤;丸山公一;Y. Murakami et al.;T.Omata;須藤祐司
• 通讯作者: 須藤祐司

Fast crystal nucleation induced by surface oxidation in Si-doped GeTe amorphous thin film

• DOI: 10.1063/1.4726107
• 发表时间: 2012-06
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Y. Saito;Y. Sutou;J. Koike

Crystallization behaviors and structural study of amorhous GeCu_2Te_3

无定形GeCu_2Te_3的结晶行为及结构研究

• 发表时间: 2012
• 作者: Y. Sutou;Y. Saito;J. Koike;P. Jovari;I. Kaban
• 通讯作者: I. Kaban