Study on Design Methodology for Reducing Both of Spatial and Temoporal Random Threshold Variation Based on Potential Control of SRAM Cell Terminals

本研究的目的是提供一种新的设计方法，能够检测和减少运输后现场阈值电压的空间/时间随机变化。本研究的重点是：(1)为检测和减少随机电报噪声（RTN）引起的Vt时间动态移位的可行性研究设计概念；(2)为可行性研究模拟建立物理模型；(3)SRAM单元终端偏移电位的控制。首次证明，当RTN的Vt变化分布的尾长超过随机掺杂波动（RDF）的尾长时，RTN引起的SRAM总余量调制量将达到前所未有的水平，在筛选设计中不能再忽视。

The purpose of this study is to provide a new design methodology enabling to detect and reduce the spatial/temporal random variations of the threshold voltage in the field after shipment. This study focuses on :(1) concept design for a feasibility study on detection and reduction of the Vt temporally dynamic shift due to Random Telegraph Noise(RTN) (2) physical modeling for the simulation for a feasibility study, and (3) control of offset potential of the terminals of SRAM cell. It has been demonstrated for the first time that the amount of the SRAM overall margin modulation due to the RTN would become unprecedented level and could no longer ignore in the screening design when the tail length of the distribution of the Vt variation for the RTN would exceed that for the random dopant fluctuation (RDF).