Charge separation of photo-excited electric charge carriers and its interaction with internal electric filed induced by crystalline polarity

光生载流子的电荷分离及其与晶体极性引起的内部电场的相互作用

• 批准号: 23651081
• 负责人: OHASHI Naoki
• 金额: $ 2.5万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23651081/
• 关键词: 酸化物半導体; 極性表面; 電子状態; 極性結晶; 自発分極; 光電子分光

Characterization of surface electronic structure of oxide crystal was investigated by means of x-ray photoelectron spectroscopy. The surface of specimen was well polished to obtain damage free surface by chemical mechanical polishing using colloidal silica nano-particles. As a result, we obtained the trace of specific electronic states originated in the polarity of crystal and identification of the electronic states by using density functional theory calculation has been done. Deposition of polarity controlled crystals was also demonstrated.

用x射线光电子能谱研究了氧化物晶体表面的电子结构。采用化学机械抛光法对试样表面进行抛光，得到无损伤表面。结果得到了源于晶体极性的特定电子态的踪迹，并利用密度泛函理论对这些电子态进行了识别。极性控制晶体的沉积也被证明。

项目成果

Oxygen diffusion phenomena and hydrogen incorporation in reducing BaTiO_3 ceramics doped with ho below solubility limit

Ho掺杂BaTiO_3陶瓷在溶解度极限以下还原时的氧扩散现象和氢掺入

• DOI: 10.1143/jjap.51.101801
• 发表时间: 2012
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Sakaguchi;I.;Watanabe;K.;Hishita;S.;Ohashi;N.;Haneda;H.
• 通讯作者: H.

Defects and charge compensation in wide bandgap semiconductors

宽带隙半导体中的缺陷和电荷补偿

• 发表时间: 2012
• 作者: OHASHI Naoki;SAKAGUCHI Isao;WATANABE Ken;ADACHI Yutaka;TAKESHI OGAKI;HISHITA Shunichi;MIYAZAKI Hiroki;Jesse Willia;ISHIGAKI Takamasa
• 通讯作者: ISHIGAKI Takamasa

Polarity-dependent photoemission spectra of wurtzite-type zinc oxide

纤锌矿型氧化锌的极性相关光电子发射光谱

• DOI: 10.1063/1.3673553
• 发表时间: 2012
• 期刊: Appl. Phys. Lett
• 作者: J. Williams;H. Yoshikawa;S. Ueda;Y. Yamashita;K. Kobayashi;Y. Adachi;H. Haneda;T. Oogaki;H. Miyazaki;Takamasa Ishigaki;N. Ohash
• 通讯作者: N. Ohash

セラミックスの物性と電荷補償

陶瓷的物理性能和电荷补偿

• 发表时间: 2012
• 作者: T. Kawahara;M. Emoto;H. Watanabe;M. Hamabe;S. Yamaguchi;Y. Hikichi;M. Minowa;大橋直樹;大橋直樹
• 通讯作者: 大橋直樹

ウルツ鉱型半導体薄膜の極性判定とその制御

纤锌矿半导体薄膜的极性测定与控制

• 发表时间: 2011
• 作者: 大橋直樹;Jesse Williams;安達裕;吉川英樹;山下良之;上田茂典;大垣武;坂口勲;菱田俊一;小林啓介
• 通讯作者: 小林啓介