Pursuit of the performance limit of organic FETs by fabricating ideal MIS interfaces

为了用有机半导体层和原子尺度的平栅绝缘体形成理想的信息管理系统界面，建立了在导电衬底上形成1微米或更小厚度的云母绝缘层的技术。与传统实验中分子取向重复性差不同的是，用过硫酸钠水溶液处理解理后的云母表面，可以外延生长适合于载流子传输的垂直分子取向的薄膜相多晶薄膜。提出了适用于此类多晶薄膜的新的载流子迁移率分析模型。利用这些模型讨论了外延生长对载流子输运的影响。

Aiming at producing an ideal MIS interfaces by an organic semiconductor layer and a flat gate insulator with an atom scale, a technique of forming a 1 micrometer or less-thick mica insulating layer on a conductive substrate has been established. Unlike the poor reproducibility of molecular orientation in conventional experiments, it has been shown that the thin-film-phase polycrystalline film with vertical molecular orientation, which is suitable for carrier transport, epitaxially grows by treating the cleaved mica surface with sodium persulfate aqueous solution. New analytical models for carrier mobility that can be used generally in such polycrystalline films have been proposed. By these models, influence of the epitaxial growth on the carrier transport was discussed.