A Strategy for Clay Electronics

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Recently the transparent flexible semiconductors that can be fabricated into a form of ultra-thin films are a target material for the development of low energy-consuming devices. Although little attention has been paid to a class of inorganic layered compounds, they are a promising candidate particularly when they are exfoliated to individual nanosheets. In the present work, a normally-on FET was fabricated by contacting two regions on a glass substrate: the one side was a cast film of perovskite-type niobate as n-type photosemiconductor and the other a cast film of synthetic saponite as an insulator. The current-voltage (I-V) characteristics were obtained under the illumination of light (340 nm). This is the first FET device based on clay minerals.