In-situ observation of electrochemical deposited thin films by diffraction method

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The formation mechanism of the electrochemical deposited thin films was examined by observing the change of the crystalline orientation and residual stress during deposition by the X-ray method and the electron backscatter diffraction method. For the copper thin films deposited by both the direct current method and the pulse method, there were few changes of the crystalline orientation during deposition. On the other hand, the residual stress varied from tensile to compression. It was suggested that the formation mechanism of copper thin films was except the Volmer-Weber type.