Investigation of crystalline orientation of III-nitride semiconductors grown on high-index and non-polar oriented GaAs substrates

高折射率和非极性取向 GaAs 衬底上生长的 III 族氮化物半导体的晶体取向研究

• 批准号: 23760008
• 负责人: MURAKAMI Hisashi
• 金额: $ 2.58万
• 依托单位: Tokyo University of Agriculture and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23760008/
• 关键词: エピタキシャル成長; 窒化インジウム; 半極性; III族窒化物半導体; 高指数面

In this research, investigation of semi-polar nitride semiconductor growth on GaAs substrates with various orientations was carried out. For fiscal 23rd, growth of semi-polar InN on GaAs(113)A, (113)B and non-polar (110) surfaces, and epitaxial relationship between InN and GaAs and mechanism for suppression of twin crystal formation were clarified. Also, for fiscal 24th, InN growth on GaAs substrates of other indices such as (112)A, (112)B, (114)A and (114)B was studied.Consequently, as we expected, [0001] direction of InN tended to be parallel to [111] direction of GaAs when the growth temperature is relatively high. As a result, we succeeded to grow semi-polar InN of various crystal orientations by selecting the index (orientation) of GaAs substrate. (For example, {10-13}-oriented and {11-22}-oriented InN can be grown on GaAs(110) and (113)B, respectively.) Also, it is possible to suppress the twin crystal formation into the grown crystal by using the difference in thermal stability between In-polarity and N-polarity InN, and by the introduction of small amount of hydrogen into the carrier gas during the growth.

本研究主要探讨半极性氮化物半导体在不同晶向的砷化镓基板上的成长。在23年度，阐明了半极性InN在GaAs（113）A、（113）B和非极性（110）表面上的生长，以及InN和GaAs之间的外延关系和抑制孪晶形成的机制。此外，24财年，我们还研究了在（112）A、（112）B、（114）A和（114）B等其他指数的GaAs衬底上生长InN，结果正如我们预期的那样，当生长温度较高时，InN的[0001]方向倾向于平行于GaAs的[111]方向。因此，我们成功地生长半极性InN的各种晶体取向通过选择的指数（取向）的GaAs衬底。(For例如，{10-13}取向和{11-22}取向的InN可以分别生长在GaAs（110）和（113）B上。此外，通过利用In极性和N极性InN之间的热稳定性差异，以及通过在生长期间将少量氢引入到载气中，可以抑制在生长晶体中形成孪晶。

项目成果

GaN自立基板上InNハイドライド気相成長における基板極性の影響

衬底极性对 GaN 自支撑衬底上 InN 氢化物气相生长的影响

• 作者: Naoto Fujita;Ryota Imai;Rie Togashi;Hisashi Murakami;Yoshinao Kumagai;and Akinori Koukitu;藤井努,石山武,石井佑弥,福田光男;尾崎信彦;K. Tadaand M. Onoda;富樫理恵
• 通讯作者: 富樫理恵

バルクPVT基板上HVPE成長によるAlN自立基板の作製

在块状 PVT 基板上通过 HVPE 生长制造 AlN 自支撑基板

• 作者: Takeshi Ishiyama;Tsutomu Fujii;Yuya Ishii;Mitsuo Fukuda;坂巻龍之介
• 通讯作者: 坂巻龍之介

Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates

源气供应顺序对(0001)蓝宝石衬底上AlN氢化物气相外延的影响

• DOI: 10.1016/j.jcrysgro.2011.10.014
• 发表时间: 2012
• 期刊: Journal of Crystal Growth
• 影响因子: 1.8
• 作者: Rie Togashi;Toru Nagashima;Manabu Harada;Hisashi Murakami;Yoshinao Kumagai;Hiroyuki Yanagi;Akinori Koukitu
• 通讯作者: Akinori Koukitu

Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy

(0001)蓝宝石衬底上卤化物气相外延两步生长(0001)ZnO单晶层

• DOI: 10.1143/jjap.50.125503
• 发表时间: 2011
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Rui Masuda;Rie Togashi;Hisashi Murakami;Yoshinao Kumagai;Akinori Kouikitu
• 通讯作者: Akinori Kouikitu

纐纈明伯,HVPE法を用いたsapphire(0001)基板上InN成長におけるNH3供給分圧依存性

Akihaku Kokei，使用 HVPE 方法在蓝宝石 (0001) 衬底上生长 InN 时的 NH3 供应分压依赖性

• 发表时间: 2012
• 作者: 藤田静雄;東脇正高，佐々木公平，倉又朗人，増井建和，山腰茂伸，大島孝仁，大友明;藤村侑,村上尚,熊谷義直,纐纈明伯;向井章，中園敦巳，大島孝仁，大友明;富樫理恵,山本翔,K.F.Karlsson,村上尚,熊谷義直,P.O.Holtz
• 通讯作者: 富樫理恵,山本翔,K.F.Karlsson,村上尚,熊谷義直,P.O.Holtz