Improvements in crystalline quality of InN for the realization of P-type doping by using a growth mode control

本研究旨在通过控制生长模式和选择性生长，减少InN晶体中的穿线位错，实现InN的金属有机气相外延（MOVPE）P型掺杂。20世纪20年代，通过MOVPE对GaAs（111）B上InN层进行了晶面控制，以提高InN层的结晶质量。有人发现，InN的结晶质量可以通过采用从三维（3D）到二维（2D）的外延生长过程中的生长模式的变化，表明位错密度减少了一个数量级的改善。21世纪，在圆形开口图案化的GaAs（111）B衬底上进行InN的选择性生长，以改善结晶质量。通过将生长温度提高到615 ℃，可以选择性地生长InN层而不需要在SiO2掩模上沉积。

In this research, I aim to realize the P-type doping of InN by metalorganic vapor phase epitaxy(MOVPE) through the reduction of threading dislocations in the InN crystal by controlling the growth mode and selective growth.For fiscal 20th, Facet control of InN was performed for the improvement of crystalline quality of InN layers on GaAs (111)B by MOVPE. It was found that the crystalline quality of InN could be improved by employing a growth mode change during epitaxial growth from three-dimensional (3D) to two-dimensional (2D), indicating a reduction of dislocation density with one order of magnitude. Selective growth of InN on the round opening patterned GaAs (111)B substrate was performed for improving the crystalline quality for fiscal 21st. Selective growth of InN layer without the deposition on the SiO2 mask could be possible by raising the growth temperature up to 615 oC.