Improvements in crystalline quality of InN for the realization of P-type doping by using a growth mode control

本研究旨在通过控制生长模式和选择性生长来减少InN晶体中的线位错，从而实现金属有机气相外延(MOVPE)对InN的P型掺杂。研究发现，在外延生长过程中，采用从三维(3D)到二维(2D)的生长模式可以改善InN的结晶质量，位错密度降低了一个数量级。为了提高21财年的晶体质量，在圆孔图案的GaAs(111)B衬底上进行了InN的选择性生长。通过将生长温度提高到615℃，可以在不沉积在SiO_2掩模上的情况下选择性地生长InN层。

In this research, I aim to realize the P-type doping of InN by metalorganic vapor phase epitaxy(MOVPE) through the reduction of threading dislocations in the InN crystal by controlling the growth mode and selective growth.For fiscal 20th, Facet control of InN was performed for the improvement of crystalline quality of InN layers on GaAs (111)B by MOVPE. It was found that the crystalline quality of InN could be improved by employing a growth mode change during epitaxial growth from three-dimensional (3D) to two-dimensional (2D), indicating a reduction of dislocation density with one order of magnitude. Selective growth of InN on the round opening patterned GaAs (111)B substrate was performed for improving the crystalline quality for fiscal 21st. Selective growth of InN layer without the deposition on the SiO2 mask could be possible by raising the growth temperature up to 615 oC.