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Improvements in crystalline quality of InN for the realization of P-type doping by using a growth mode control

Improvements in crystalline quality of InN for the realization of P-type doping by using a growth mode control
通过生长模式控制提高InN晶体质量以实现P型掺杂
批准号:
20760010
负责人:
MURAKAMI Hisashi
金额:
$2.66万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2009

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项目成果

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中文摘要
翻译
本研究旨在通过控制生长模式和选择性生长,减少InN晶体中的穿线位错,实现InN的金属有机气相外延(MOVPE)P型掺杂。20世纪20年代,通过MOVPE对GaAs(111)B上InN层进行了晶面控制,以提高InN层的结晶质量。有人发现,InN的结晶质量可以通过采用从三维(3D)到二维(2D)的外延生长过程中的生长模式的变化,表明位错密度减少了一个数量级的改善。21世纪,在圆形开口图案化的GaAs(111)B衬底上进行InN的选择性生长,以改善结晶质量。通过将生长温度提高到615 ℃,可以选择性地生长InN层而不需要在SiO2掩模上沉积。
英文摘要
In this research, I aim to realize the P-type doping of InN by metalorganic vapor phase epitaxy(MOVPE) through the reduction of threading dislocations in the InN crystal by controlling the growth mode and selective growth.For fiscal 20th, Facet control of InN was performed for the improvement of crystalline quality of InN layers on GaAs (111)B by MOVPE. It was found that the crystalline quality of InN could be improved by employing a growth mode change during epitaxial growth from three-dimensional (3D) to two-dimensional (2D), indicating a reduction of dislocation density with one order of magnitude. Selective growth of InN on the round opening patterned GaAs (111)B substrate was performed for improving the crystalline quality for fiscal 21st. Selective growth of InN layer without the deposition on the SiO2 mask could be possible by raising the growth temperature up to 615 oC.
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Growth of 2H-A1N films on Si(111)grown by RF-MBE using an interface reaction epitaxy and AM-MEE for HVPE growth
使用界面反应外延和 AM-MEE 进行 HVPE 生长,通过 RF-MBE 在 Si(111) 上生长 2H-AlN 薄膜
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: [T.Ohachi, N.Yamabe, K.Ohkusa, H.Murakami, Y.Kumagai, A.Koukitu]
通讯作者: A.Koukitu
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [H. Murakami, H. -C. Cho, Y. Kumagai, A. Koukitu]
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Investigation of polarity dependent InN{0001}decomposition in N_2 and H_2
研究 N_2 和 H_2 中极性相关的 InN{0001} 分解
DOI: --
发表时间: 2009
期刊: Physica Status Solidi C 6
影响因子: --
作者: [R.Togashi, T.Kamoshita, H.Adachi, H.Murakami, Y.Kumagai, A.Koukitu]
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ハイドライド気相成長法によるsapphire(0001)基板上InN成長の成長温度依存性
通过氢化物气相外延在蓝宝石 (0001) 衬底上生长 InN 的生长温度依赖性
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: [大竹斐, 足立裕和, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯]
通讯作者: 纐纈明伯
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