Investigation of Preferential Source Generation Mechanism for the Realization of Bulk Crystal Growth of Indium Nitride

实现氮化铟体晶体生长的优先源生成机制研究

• 批准号: 23760006
• 负责人: TOGASHI Rie
• 金额: $ 2.83万
• 依托单位: Tokyo University of Agriculture and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23760006/
• 关键词: エピタキシャル; 結晶成長; 窒化インジウム; HVPE; 熱力学解析

In order to realize high-crystalline quality and thick InN layers, following studies were performed: (1) investigation of the influence of growth rate and grown thickness on InN crystalline quality using a conventional hydride vapor phase epitaxy (HVPE) system, (2) thermodynamic analysis of the In source zone for appreciable generation of InCl3, (3) design and development of a new HVPE system with a two-stage source generation for the generation of InCl3, and (4) investigation of high-speed InN growth in both In- and N-polarities using the new HVPE system.The same growth rate of InN grown by new HVPE system was achieved only using around 1/40 times the total Cl2 input partial pressure of InN grown by conventional HVPE system. Thus, efficiency for the generation of InCl3 gas was significantly improved compared with conventional HVPE system. In and N polarity InN can be grown at high growth rates at high temperature, owing to the preferential formation of InCl3.

为了实现高结晶质量和较厚的InN层，进行了以下研究：(1)利用传统的氢化物气相外延（HVPE）系统研究生长速率和生长厚度对InN晶体质量的影响；(2)对可明显生成InCl3的In源区进行热力学分析；(3)设计和开发一种新的两级源生成InCl3的HVPE系统；(4)利用新的HVPE系统研究In极性和n极性下InN的高速生长。新HVPE系统生长的InN增长率仅为传统HVPE系统生长的InN总Cl2输入分压的1/40左右。因此，与传统HVPE系统相比，cl3气体的生成效率显著提高。In极性和N极性的InN可以在高温下以较高的生长速率生长，这是由于InCl3的优先形成。

项目成果

High-Speed Growth of In- and N-polarity InN Using a Two-Stage Source Generation Hydride Vapor Phase Epitaxy System

使用两级源发生氢化物气相外延系统高速生长 InN 极性和 N 极性

• 发表时间: 2013
• 作者: Rie Togashi;Naoto Fujita;Ryota Imai;Hisashi Murakami;Yoshinao Kumagai;and Akinori Koukitu
• 通讯作者: and Akinori Koukitu

Improvement of crystalline and optical properties of InN grown on nitrided (0001) sapphire with high NH3 input partial pressures by HVPE

通过 HVPE 改善在高 NH3 输入分压的氮化 (0001) 蓝宝石上生长的 InN 的晶体和光学特性

• 作者: K. Asakawa;K. Yamamoto;D. Wang;H. Nakashima;N. Ozaki;T. Kanki;多田和也;Rie Togashi
• 通讯作者: Rie Togashi

High-speed growth of InN over 10 μm/h by a novel HVPE system

通过新型 HVPE 系统以超过 10 μm/h 的速度高速生长 InN

• 作者: N. Fujita;R. Imai;H. Saito;R. Togashi;H. Murakami;Y. Kumagai;and A. Koukitu
• 通讯作者: and A. Koukitu

GaN自立基板上InNハイドライド気相成長における基板極性の影響

衬底极性对 GaN 自支撑衬底上 InN 氢化物气相生长的影响

• 作者: Naoto Fujita;Ryota Imai;Rie Togashi;Hisashi Murakami;Yoshinao Kumagai;and Akinori Koukitu;藤井努,石山武,石井佑弥,福田光男;尾崎信彦;K. Tadaand M. Onoda;富樫理恵
• 通讯作者: 富樫理恵

前駆体二段階生成HVPE法によるIn極性およびN極性InNの高速成長

两步前驱体 HVPE 法快速生长 In 极性和 N 极性 InN

• 作者: 斉藤広伸;藤田直人，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯
• 通讯作者: 藤田直人，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯