Crystal growth and electronic structures of fullerene / GaAs heterostructures

富勒烯C_<60>分子在晶体基底上结晶成fcc结构。然而，C_<60>晶体由于结合能弱，非常脆弱，化学性质不稳定，很难将C_<60>晶体应用到实际器件中。本研究的动机是利用分子束外延（MBE）技术制备C60 / III-V型化合物半导体异质结构，这是分析外延生长过程中最常用的技术。我们主要研究了C_<60>分子在GaAs衬底上的外延生长特性，以及在GaAs晶格中使用C_<60>分子的新器件的开发，如红外探测器和存储器件。

Fullerene C_<60> molecules crystallize into a fcc structure on crystalline substrates. However, C_<60> crystals are very fragile and chemically unstable due to the weak binding energy, and it is very difficult to apply C_<60> crystals to practical devices. The motivation of this research is to fabricate C60 / III-V compound semiconductors heterostructures by using molecular beam epitaxy (MBE) which is the most used technique for the analysis of epitaxial growth process. We have concentrated on the study of characteristics of C_<60> epitaxial growth on GaAs substrates and the development of new devices using C_<60> molecules in GaAs lattices such as infrared detectors and memory devices.