Crystal growth and electronic structures of fullerene / GaAs heterostructures

富勒烯C&lt；60&gt；分子在晶体衬底上结晶成面心立方结构。然而，由于C&lt；60&gt；晶体的结合能很弱，化学不稳定，非常脆弱，很难将其应用于实际器件。本研究的目的是利用分子束外延技术(MBE)制备C60/III-V化合物半导体异质结，MBE是分析外延生长过程最常用的技术。我们主要研究了在GaAs衬底上C_(60)外延生长的特性，以及利用GaAs晶格中的C_(60)分子研制新的器件，如红外探测器和存储器件。

Fullerene C_<60> molecules crystallize into a fcc structure on crystalline substrates. However, C_<60> crystals are very fragile and chemically unstable due to the weak binding energy, and it is very difficult to apply C_<60> crystals to practical devices. The motivation of this research is to fabricate C60 / III-V compound semiconductors heterostructures by using molecular beam epitaxy (MBE) which is the most used technique for the analysis of epitaxial growth process. We have concentrated on the study of characteristics of C_<60> epitaxial growth on GaAs substrates and the development of new devices using C_<60> molecules in GaAs lattices such as infrared detectors and memory devices.