Development of new devices using fullerene and GaAs heterostructures.

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Intensity oscillations of reflection high-energy electron diffraction (RHEED) are observed during epitaxial growth of a C_<60> layer on GaAs substrates. The frequencies of the oscillations coincide well with the growth rates of C_<60> layers, suggesting that C_<60> layers grow by layer-by-layer growth mode. C_<60> uniformly doped and delta-doped GaAs layers are grown by migration enhanced epitaxy method. C_<60> uniformly doped GaAs layers show highly resistive characteristics, suggesting that C_<60> molecules cannot be decomposed into isolated C atoms. Electrochemical capacitance-voltage profiles of C_<60> delta-doped GaAs layers suggest that C_<60> molecules in GaAs lattice produce deep electron traps which can be charged or discharged by applied electrical fields.