Research on development of the growth of III-V nanowires for applications in bottom-up optoelectronic devices
Research on development of the growth of III-V nanowires for applications in bottom-up optoelectronic devices
批准号:
23760296
负责人:
TATEBAYASHI Jun
金额:
$2.83万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2012
中文摘要
点击翻译按钮获取中文摘要
英文摘要
Objective of this research is to establish the growth technique for compound semiconductor nanowires for applications in lasers, single photon emitters and solar cells. I establish the growth technology to form quantum dot structures embedded in nanowires and processing technology for nanowire-based optoelectronic devices. I characterize the optical and device characteristics of the devices utilizing nanowire-quantum dots. I observe single-photon emission process from high-quality single nanowire-quantum dot by means of auto-correlation measurements. I propose and demonstrate a growth scheme to form highly uniform, multi-stacked quantum dots embedded in nanowires and achieve high quality multi-stacked nanowire-quantum dots up to 200 layer without degradation of the optical properties. In addition, we demonstrate optoelectronic devices including lasers, single photon emitters and solar cells utilizing nanowire-quantum dots.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
Formation of highly-uniform multi-stacked InGaAs/GaAs quantum-dots-in-nanowires for photovoltaic applications
用于光伏应用的高度均匀多层堆叠 InGaAs/GaAs 纳米线量子点的形成
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[J. Tatebayashi, Y. Ota, K. Tanabe, M. Nishioka, S. Iwamoto, and Y. Arakawa]
通讯作者:
and Y. Arakawa
単一GaAsナノワイヤ中に埋め込まれた積層InGaAs量子ドットの均一性制御
嵌入单个 GaAs 纳米线中的堆叠 InGaAs 量子点的均匀性控制
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[舘林 潤,太田 泰友,石田悟己,西岡 政雄,岩本 敏, 荒川 泰彦]
通讯作者:
荒川 泰彦
AlGaAs/GaAsコア・シェル構造導入によるInGaAs/GaAsナノワイヤ量子ドットの発光特性改善
引入AlGaAs/GaAs核壳结构改善InGaAs/GaAs纳米线量子点的发光性能
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[舘林 潤, 西岡 政雄, 荒川 泰彦]
通讯作者:
荒川 泰彦
Formation and optical properties of multi-stack InAs/GaAs quantum dots embedded in GaAs nanowires grown by selective metalorganic chemical vapor deposition
选择性金属有机化学气相沉积生长的嵌入 GaAs 纳米线中的多层 InAs/GaAs 量子点的形成和光学性质
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[J. Tatebayashi, D. Karunathillake, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto, and Y. Arakawa]
通讯作者:
and Y. Arakawa
GaAs ナノワイヤ中のInGaAs 量子ドットの形成と光学特性
GaAs纳米线中InGaAs量子点的形成及其光学性质
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto and Y. Arakawa, 舘林 潤,Dumindu Karunathillake,石田 悟己,西岡 政雄,荒川 泰彦]
通讯作者:
舘林 潤,Dumindu Karunathillake,石田 悟己,西岡 政雄,荒川 泰彦
共 18 条
海外基金