权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Room temperature operating continuous wave terahertz light source via shallow electronic states transitions in semiconductors

通过半导体中的浅电子态跃迁在室温下运行连续波太赫兹光源

基本信息

批准号：
23656392
负责人：
OYAMA Yutaka
金额：
$ 2.5万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Challenging Exploratory Research
财政年份：
2011
资助国家：
日本
起止时间：
2011 至 2012
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23656392/
关键词：
テラヘルツ浅い準位

项目摘要

Compact THz light source based on the optical transitions via shallow levels in semiconductors was successfully developed and those performances have been improved. Ge and other various semiconductor crystals have been used. CW semiconductor laser with 1 micron wavelength was used as an excitation light source. The generation of THz light via optical transitions by shallow levels can be confirmed. Crystal temperature dependences of output intensity have been shown. In case of GaAs, below gap excitation by 1 micron wavelength light can be successfully used for the indirect two photon excitation process via EL2 level. This kind of below gap excitation has a superior feature in that the homogeneous excitation can be possible. In particular, the specific temperature dependences of THz output can be well understood in view of the photoquenching and photo recovery effect of EL2 levels in GaAs. Generation THz wavelength was well estimated by using THz band pass filters. THz surface emission characteristics by edge light excitation was also realized. This result can be successfully applied for the THz wavelength selective resonant cavity constructions for future THz lasers.

基于半导体中浅能级跃迁的紧凑型太赫兹光源已经研制成功，其性能也得到了改善。已经使用了Ge和其他各种半导体晶体。激发光源采用波长为1微米的连续半导体激光器。可以证实通过浅能级的光学跃迁产生THz光。研究了晶体温度对输出强度的影响。对于GaAs，1微米波长的低禁带激发可以成功地用于EL2能级的间接双光子激发过程。这种低于带隙的激励具有一个优越的特点，即均匀激励是可能的。特别是，考虑到GaAs中EL2能级的光致猝灭和光恢复效应，可以很好地理解THz输出的特定温度依赖关系。利用太赫兹带通滤光片对产生的太赫兹波长进行了很好的估计。实现了边缘光激发下的THz面发射特性。这一结果可成功地应用于未来太赫兹激光器的波长选择谐振腔结构。