Site- and shape-controlled growth of InAs quantum dots and their application to the electronics/photonics devices

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Electrical manipulation and read-out of quantum states in zero-dimensional nanostructures by nano-gap metal electrodes is expected to bring about innovation in quantum information processing.In this study, the site- and shape-controlled InAs quantum dots (QDs) were successfully fabricated, which drastically improved the fabrication yield of the functional devices using single QDs. Then, a variety of remarkable properties of the InAs QD transistors were demonstrated, such as QD supercurrent transistors, electrically tunable large g-factors and spin-orbit interaction, and optical pumping of carriers in the terahertz frequency range. These works are opening a way for novel quantum information applications on self-assembled InAs QDs.