Physics and application of single self-assembled InAs quantum dot transistors

我们通过形成纳米带隙电极，直接与生长在GaAs表面的单个自组装InAs量子点接触，形成了横向电子隧道结构。所制备的结表现出单电子隧穿行为，并显示出明显的壳层填充。当量子点中的电子与电极之间的量子力学耦合很强时，在T_K~80K的很高温度下观察到了近藤效应。由于InAs量子点与金属的良好兼容性，可以使用超导或铁磁纳米间隙电极来增加结构的进一步功能。

We have fabricated lateral electron tunneling structures by forming nanogap electrodes directly contacting single self-assembled InAs quantum dots (QDs) grown on GaAs surfaces. The fabricated junctions showed single electron tunneling behaviors and exhibited clear shell fillings. When quantum mechanical coupling between electrons in the QDs and the electrodes was strong, the Kondo effect was observed up to the very high temperature of T_K～80K.Owing to the good compatibility of InAs QDs with metals, further functionalities can be added to the structure by using superconducting or ferromagnetic nanogap electrodes.