Synthesis and Characterization of Au nanoparticle-Supported Bulk Thermoelectric Materials

金纳米粒子负载体热电材料的合成与表征

• 批准号: 23686091
• 负责人: KUROSAKI Ken
• 金额: $ 16.47万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (A)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23686091/
• 关键词: 熱電材料; 熱電変換

SbBiTe bulk alloys have been some of the most efficient thermoelectric (TE) materials near room temperature. On the other hand, the way to enhance the dimensionless figure of merit (ZT) is to decrease the lattice thermal conductivity (κlat) of the material, while maintaining a high electrical conductivity, i.e., to create a situation in which phonons are scattered but electrons are unaffected. Here we synthesizeda complete nanocomposite using γ-ray irradiation, in which Au/AuTe_2 nanoparticles are dispersed uniformly without aggregation in the Sb_<1.6>Bi_<0.4>Te_3 matrix. The κlatwas significantly reduced mainly due to the increased number of interfaces for phonon scattering between the nanoparticles and the matrix phase, thereby resulting in clear enhancement of ZT. The maximum ZTvalue of the Au/AuTe_2 nanoparticle-supported Sb_<1.6>Bi_<0.4>Te_3 nanocomposite was 1.01 at 423 K, which is about 18% higher than the maximum Ztvalue of Sb_<1.6>Bi_<0.4>Te_3

SbBiTe块体合金是室温附近最有效的热电材料之一。另一方面，提高无量纲品质因数（ZT）的方法是降低材料的晶格热导率（κlat），同时保持高电导率，即，来创造一种声子被散射但电子不受影响的情况。本文采用γ射线辐照法合成了完整的纳米复合材料，其中Au/AuTe_2纳米粒子在Sb_ Bi_ Te_3基体中均匀分散，无团聚<1.6><0.4>。介电常数的显著降低主要是由于纳米颗粒和基体相之间声子散射界面的增加，从而导致ZT的明显增强。Au/AuTe_2纳米粒子负载的Sb_<1.6>Bi_<0.4>Te_3纳米复合材料在423 K时的最大Z_t值为1.01，比Sb_ Bi_ Te_3的最大Z_t值提高了约18<1.6><0.4>

项目成果

タリウムを充填したCoSb3の熱電特性

铊填充CoSb3的热电性能

• 发表时间: 2011
• 作者: R. Ishikawa;N. Shibata;F. Oba;T. Taniguchi;S.D. Findlay;I. Tanaka and Y. Ikuhara;黒崎健
• 通讯作者: 黒崎健

High-temperature thermoelectric properties of Cu2Ga4Te7 with defect zinc-blende structure

• DOI: 10.1063/1.3583662
• 发表时间: 2011-04-25
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Plirdpring, Theerayuth;Kurosaki, Ken;Yamanaka, Shinsuke
• 通讯作者: Yamanaka, Shinsuke

ナノスケール構造制御による高効率バルクシリコン熱電材料の開発

通过纳米级结构控制开发高效体硅热电材料

Effect of Vacancy Distribution on the Thermal Conductivity of Ga2Te3 and Ga2Se3

• DOI: 10.1007/s11664-010-1479-7
• 发表时间: 2011-01
• 期刊: Journal of Electronic Materials
• 影响因子: 2.1
• 作者: Chang-Eun Kim;K. Kurosaki;M. Ishimaru;H. Muta;S. Yamanaka

High-temperature thermoelectric properties of Cu1-xInTe2 with a chalcopyrite structure

• DOI: 10.1063/1.3678044
• 发表时间: 2012-01-23
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Kosuga, Atsuko;Plirdpring, Theerayuth;Yamanaka, Shinsuke
• 通讯作者: Yamanaka, Shinsuke