Primary recrystallization of covalent single-crystal semiconducting materials

单晶半导体材料，如硅，由于其共价特性，本质上是脆性的，在小载荷下容易破裂。因此，几乎所有的研究人员都“相信”，要使它们大幅度变形是不可能的。结果表明，尽管大变形后热处理的一次再结晶是金属材料领域的常识，但硅的一次再结晶尚未得到研究。本文研究了单晶硅块体在硅熔点以下的大变形，并对其一次再结晶进行了研究。

Single crystal semiconducting materials like silicon, which is brittle in nature owing to its covalent character, easily crack at a small load. Therefore, almost researchers "believe" it is impossible to deform them largely. As the results, primary recrystallization of silicon has not been studied although primary recrystallization by heat-treatment after large deformation is common knowledge in metal materials field. In the present study, large deformation of single-crystal silicon bulk at the temperature just below the silicon melting point was demonstrated, and the primary recrystallization of them were studied.