Three Dimensional Element Analysis by Using Inelastic Electron Tunneling Spectroscopy

在本研究中，为了高精度地测量STM-IETS并证明其作为一种表征方法的有效性，对STM及其测量系统进行了改进。由于这一改进，(1)制备了适合于IETS的大平台和无缺陷的烷基硫醇SAM表面，(2)重复获得了Au(111)表面上烷基硫醇SAM表面的Di/dV映射。随着实验装置的改进，以新的观点回顾和报道了烷硫醇SAM的IET过程，基于迄今获得的IETS数据，新获得的红外光谱和密度泛函理论，也发现了IET过程在通过纳米器件的电子传输中的出现及其对电导的影响。

In the present study, in order to measure STM-IETS with high precision and demonstrate its availability as a characterization method, an STM and its measurement system havebeen modified. Owing to this modification(1) alkanethiol SAM surfaces with large terrace and defect free suitable for IETS were fabricated and(2) dI/dV mapping for alkanethiolSAM surfaces on Au(111) surfaces were repeatedly obtained.Along with the modification of the experimental setup, IET processes for alkanethiol SAM have been reviewed and reported in Progress in Surface Science with new view point, based on the so far obtained IETS data, newly acquired Infrared spectroscopy, theory with density functional theory.Appearance of the IET process in the electron transport through a nanodevice and its influence on the conductions were also found.