Three Dimensional Element Analysis by Using Inelastic Electron Tunneling Spectroscopy

在本研究中，为了高精度地测量STM-IETS，并证明其作为表征方法的可用性，STM及其测量系统已被修改。由于这种改进，（1）制备了适合IETS的具有大平台和无缺陷的烷硫醇SAM表面，（2）重复获得了烷硫醇SAM在Au（111）表面上的dI/dV图，沿着对实验装置的改进，基于迄今获得的IETS数据，最新获得的红外光谱，理论与密度泛函理论，IET过程中的电子传输通过纳米器件的出现和它对电导的影响也被发现。

In the present study, in order to measure STM-IETS with high precision and demonstrate its availability as a characterization method, an STM and its measurement system havebeen modified. Owing to this modification(1) alkanethiol SAM surfaces with large terrace and defect free suitable for IETS were fabricated and(2) dI/dV mapping for alkanethiolSAM surfaces on Au(111) surfaces were repeatedly obtained.Along with the modification of the experimental setup, IET processes for alkanethiol SAM have been reviewed and reported in Progress in Surface Science with new view point, based on the so far obtained IETS data, newly acquired Infrared spectroscopy, theory with density functional theory.Appearance of the IET process in the electron transport through a nanodevice and its influence on the conductions were also found.