Three Dimensional Element Analysis by Using Inelastic Electron Tunneling Spectroscopy

在本研究中，为了高精度地测量STM- iets并证明其作为表征方法的有效性，对STM及其测量系统进行了改进。通过这种修饰(1)制备出了适合IETS的大台阶无缺陷的烷烃硫醇SAM表面；(2)获得了烷烃硫醇SAM表面在Au（111）表面上的dI/dV映射。基于已有的红外光谱数据，结合密度泛函理论，在改进实验装置的基础上，从新的角度综述了烷烃硫醇SAM的IET过程，并在《表面科学进展》上发表了相关文章。还发现了电子在纳米器件中的传递过程及其对电导的影响。

In the present study, in order to measure STM-IETS with high precision and demonstrate its availability as a characterization method, an STM and its measurement system havebeen modified. Owing to this modification(1) alkanethiol SAM surfaces with large terrace and defect free suitable for IETS were fabricated and(2) dI/dV mapping for alkanethiolSAM surfaces on Au(111) surfaces were repeatedly obtained.Along with the modification of the experimental setup, IET processes for alkanethiol SAM have been reviewed and reported in Progress in Surface Science with new view point, based on the so far obtained IETS data, newly acquired Infrared spectroscopy, theory with density functional theory.Appearance of the IET process in the electron transport through a nanodevice and its influence on the conductions were also found.