Development of zero-gap materials based on unsymmetrical metal complexes under ambient pressure

点击翻译按钮获取中文摘要

Zero-gap materials such as a graphene are intensively studied because of their potentials for development of new electric devices. However, synthesis and physical measurements of the thin film of graphene are difficult. The zero gap material based on the bulk compound is realized by applying pressure to an organic conductor. Dirac corn type electronic states are observed in the zero-gap materials. In this work, the electronic state of the organic conductor crystals based on unsymmetrical metal-dhithiolene complexes, exhibiting the Dirac corn like electronic state were investigated by crystal structures and their physical properties.