Perpendicular magnetic anisotropy enhanced by tuning electronic structure of organic-semiconductor/metallic-magnet interface

研究了分子/磁性材料界面相互作用对磁性材料的矫顽力、磁化强度等磁性能的影响，发现在C60、Alq 3和Rubrene分子膜上沉积的Co膜的矫顽力分别为40、30、15和640 Oe。这反映了铁磁金属与不同分子界面上的不同电子耦合。在此基础上，我们研制了有机自旋阀器件，并获得了迄今为止报道的室温下最高的磁电阻比之一（C60为5%，Alq 3为8%）。

We have studied the effect of molecules/magnetic materials interface interactions on magnetic properties, such as coercivity, magnetization and so on. Importantly, it was found that the coercivity of Co film was 40, 30, 15 and 640 Oe when deposited on C60, Alq3, and Rubrene molecular films, respectively. This reflects the different electronic couplings at the interface of ferromagnetic metal with different molecules. Based on these results, we developed the organic spin valve device and obtained one of the highest magnetoresistance ratio (5% for C60 and 8% for Alq3 based spin valve) at room temperature reported so far.