Study of the spin-pumping-induced spin transport in silicon and germanium at room temperature

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For more integration of semiconductor devices, a study for development of the beyond-CMOS technology was carried out from the viewpoint of spintronics. In this study, the achievement of room-temperature-spin-transport in the p-type Si, p-type Ge and n-type Ge with spin injection by using the spin-pumping and with spin detection by using the inverse spin-Hall effect in the non-magnetic metal attached to the target materials was focused.In this study, the spin-pumping-induced spin transport in the p-Si at room temperature was demonstrated. Also, spin injection into the p-Ge was achieved. These results were suggested that the evaluation method of the spin transport in this study was able to be applied to almost all solid-state materials, and the room temperature spin transport in aluminum or graphene was successfully demonstrated as good examples with this method.