High performance SnO2 based transparent conductive films by using seed layer

本研究采用固相晶化和种子层相结合的方法成功制备了具有良好刻蚀性能的高导电SnO 2薄膜，并首次研究了脉冲激光沉积法在未加热玻璃衬底上制备的非晶未掺杂和Ta掺杂SnO 2（TTO）薄膜的输运性质。优化的膜表现出2*10-3 Ω *cm的电阻率，1-2*1020 cm-3的载流子密度（ne），并且在可见光区高度透明。钽掺杂对非晶薄膜中的ne影响不大，相反，在结晶相。这些结果表明，载流子电子在非晶SnO 2薄膜起源于氧空位，类似于在In 2 O3基非晶薄膜。此外，我们发现，TiO 2晶种层提高了导电性，导致电阻率为1*10-3 ohm*cm。然而，结构表征显示，没有外延生长的TiO 2上不像我们以前的研究加热基板。

In this study, we successfully fabricated highly conductive SnO2 thin films with improved etching properties by combining solid phase crystallization with seed-layer method.We first investigated the transport properties of amorphous undoped and Ta-doped SnO2 (TTO) thin films grown on unheated glass substrates by pulsed laser deposition. Optimized films exhibited a resistivity of 2*10-3 ohm*cm, carrier density (ne) of 1-2*1020 cm-3, and were highly transparent in the visible region. Ta-doping had little effect on ne in amorphous films, in contrast to in crystalline phases. These results suggest that carrier electrons in amorphous SnO2 films originated from oxygen vacancies, similar to in In2O3-based amorphous films. In addition, we found that anatase TiO2 seed layer improved conductivity, resulting in resistivity of 1*10-3 ohm*cm. Structural characterization, however, revealed no epitaxial growth on anatase TiO2 unlike our previous studies on heated substrates.