课题基金 / 基金详情

Fabrication of low-cost oxide LED without minor metals and toxic elements by atmospheric pressure film formation method

Fabrication of low-cost oxide LED without minor metals and toxic elements by atmospheric pressure film formation method
常压成膜法制备不含微量金属和有毒元素的低成本氧化物LED
批准号:
15K05991
负责人:
Nakamura Yusui
金额:
$3.16万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2015
资助国家:
日本
项目状态:
已结题
起止时间:
2015-04-01 至 2018-03-31

项目摘要

项目成果

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
DOI: 10.7567/apex.8.125502
发表时间: 2015-11
期刊: Applied Physics Express
影响因子: 2.3
作者: [H. Tanoue;T. Taniguchi;S. Wada;Shinya Yamamoto;Shohei Nakamura;Y. Naka;H. Yoshikawa;Mizue Munekata;S. Nagaoka;Yusui Nakamura]
通讯作者: H. Tanoue;T. Taniguchi;S. Wada;Shinya Yamamoto;Shohei Nakamura;Y. Naka;H. Yoshikawa;Mizue Munekata;S. Nagaoka;Yusui Nakamura
Crystal Growth and Characterization of Undoped ZnO on m-plane Sapphire by Mist-CVD Technique with Different Carrier Gas Flow Rates
不同载气流量下雾气CVD技术在m面蓝宝石上生长未掺杂ZnO的晶体生长及表征
DOI: --
发表时间: 2015
期刊:
影响因子: --
作者: [Hla Myo Tun, Thant Zin Win, Kensuke Minami, Satomi Teraya, Koushi Okita, Yusui Nakamura]
通讯作者: Yusui Nakamura
DOI: 10.1002/pssa.201600603
发表时间: 2016-06
期刊: 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
影响因子: --
作者: [H. Tanoue;T. Yamashita;S. Wada;Zenji Yatabe;S. Nagaoka;Yusui Nakamura]
通讯作者: H. Tanoue;T. Yamashita;S. Wada;Zenji Yatabe;S. Nagaoka;Yusui Nakamura
Epitaxial Growth of Non-polar ZnS on Sapphire Substrate by Mist Chemical Vapor Deposition
雾气化学气相沉积法在蓝宝石衬底上外延生长非极性ZnS
DOI: --
发表时间: 2017
期刊:
影响因子: --
作者: [Koshi Okita, Taiki Goto, Yudai Tanaka, Masato Takenouchi, Zenji Yatabe and Yusui Nakamura]
通讯作者: Zenji Yatabe and Yusui Nakamura
9