Creation of 2D-Atomically-Thin-Layered Heterojunctions and their Applications to Novel Terahertz Photonic Devices
Creation of 2D-Atomically-Thin-Layered Heterojunctions and their Applications to Novel Terahertz Photonic Devices
批准号:
16H06361
负责人:
OTSUJI Taiichi
金额:
$120.31万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (S)
财政年份:
2016
资助国家:
日本
项目状态:
已结题
起止时间:
2016-05-31 至 2021-03-31
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CNRS-Univ. Montpellier(フランス)
CNRS-蒙彼利埃大学(法国)
DOI:
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发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Plasmon resonances in 2DEG and their applications to high-speed electron devices
2DEG 中的等离子共振及其在高速电子器件中的应用
DOI:
--
发表时间:
2018
期刊:
影响因子:
--
作者:
[中村寿樹, 武藤則男, 中平 敦, T. Otsuji, T. Otsuji]
通讯作者:
T. Otsuji
Terahertz light emission and lasing in current-driven graphene-based 2D nano- and plasmonic-structures (Keynote)
电流驱动的石墨烯二维纳米和等离子体结构中的太赫兹光发射和激光(主题演讲)
DOI:
--
发表时间:
2019
期刊:
EuroSciCon Joint Event on Laser Optics, Quantum & Plasma Physics Abstract Book, Stockholm, Sweden, May 5-10
影响因子:
--
作者:
[勝見恒太, Z. Z. Li, H. Raffy, Y. Gallais, 島 野亮, T. Otsuji]
通讯作者:
T. Otsuji
Terahertz light emission and lasing in graphene under current-injection pumping
电流注入泵浦下石墨烯中的太赫兹光发射和激光
DOI:
10.21767/2349-3917-c1-001
发表时间:
2018
期刊:
European Conf. on Lasers, Optics and Photonics, Dig.
影响因子:
--
作者:
[Keisuke Hibino, Masatomo Yashima, Takayoshi Oshima, Kotaro Fujii, Kazuhiko Maeda, T. Otsuji]
通讯作者:
T. Otsuji
Dynamics of surface electron trapping of a GaN-based transistors revealed by spatiotemporally resolved x-ray spectroscopy
时空分辨 X 射线光谱揭示 GaN 基晶体管表面电子俘获动力学
DOI:
10.1063/5.0020500
发表时间:
2020
期刊:
Applied Physics Letters
影响因子:
4
作者:
[Omika Keiichi, Takahashi Kensuke, Yasui Akira, Ohkochi Takuo, Osawa Hitoshi, Kouchi Tsuyoshi, Tateno Yasunori, Suemitsu Maki, Fukidome Hirokazu]
通讯作者:
Fukidome Hirokazu
共 212 条
Extraordinary plasmon instabilities in graphene Dirac Fermions and their terahertz functional device applications
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批准号:20K20349
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项目类别:Grant-in-Aid for Challenging Research (Pioneering)
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资助金额:$16.47万
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财政年份:2018
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负责人:OTSUJI Taiichi
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依托单位:
Creation of graphene terahertz lasers
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批准号:23000008
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项目类别:Grant-in-Aid for Specially Promoted Research
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资助金额:$295.69万
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财政年份:2011
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负责人:OTSUJI Taiichi
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依托单位:
Exploring Novel Electromagnetic Circuits Based on Management of Low-Dimensional Plasmonic Dispersion
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批准号:18106006
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项目类别:Grant-in-Aid for Scientific Research (S)
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资助金额:$72.13万
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财政年份:2006
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负责人:OTSUJI Taiichi
-
依托单位:
Study on Optically Injection-Locked Terahertz Oscillation in Plasma-Wave Resonant Transistors
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批准号:13450147
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$6.21万
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财政年份:2001
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负责人:OTSUJI Taiichi
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依托单位: