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Study on Optically Injection-Locked Terahertz Oscillation in Plasma-Wave Resonant Transistors

等离子波谐振晶体管中光注入锁定太赫兹振荡的研究

基本信息

批准号：
13450147
负责人：
OTSUJI Taiichi
金额：
$ 6.21万
依托单位：
Kyushu Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2003
项目状态：
已结题

项目摘要

We have studied the possibility of optically injection-locked terahertz oscillations of the plasma-wave transistors (PWT's). The PWT is a new type of the electron device that utilizes the plasma resonance effect of highly dense two-dimensional conduction electrons in the field effect transistors (FET) channel. The resonance frequency can be externally controlled by the gate bias potential, which offers the tenability of oscillation. First, the plasma resonant phenomena were experimentally investigated for a sub-100-nm GaAs MESFET. The terahertz excitation was performed by photomixing the two laser sources in a manner of difference-frequency generation. The optically injection-locked plasma resonance modulates the DC drain-source potential. The resonant intensity, thus, can be measured by monitoring the DC modulation component : ΔVds. The gate-bias dependence of ΔVds was measured under several, difference-frequency conditions. The results clearly indicated the occurrence of plasma reson … More ance in the terahertz range. It was verified for the first time that the plasma resonance frequency is controlled externally by the gate bias in a wide terahertz range. Next, we have carried on the first observation of the frequency dependence of the plasma resonant intensity for a 0.15-μm gate-length InGaP/InGaAs/GaAs pseudomorphic HEMT (pHEMT). When the gate bias was properly applied to induce a sufficient density of electrons in the channel, the resonance was clearly observed with a double peak. The first peak at 1.9 THz corresponds to the fundamental resonance while the second peak at 5.8 THz corresponds to the third harmonic resonance. Observed resonant frequencies coincided well -to the theoretical calculation. The detected plasma resonances are actually non-radiative-mode oscillation and their energy is estimated to be on the order of nW under mW excitation power. A mean to convert the plasma oscillation to an electromagnetic radiation should be employed onto the device structure. Also, improvement of the quantum efficiency is the key.' These are the future subjects. Less

我们研究了等离子体波晶体管（PWT）的光注入锁定太赫兹振荡的可能性。PWT是一种利用场效应晶体管（FET）沟道中高密度二维导电电子的等离子体共振效应的新型电子器件。谐振频率可以由栅极偏置电位外部控制，这提供了振荡的可维持性。首先，实验研究了亚100纳米GaAs MESFET的等离子体共振现象。采用差频产生的方式，通过对两个激光源进行光混频，实现了太赫兹波的激发。光学注入锁定等离子体共振调制直流漏源电位。因此，可以通过监测DC调制分量来测量谐振强度：ΔVds。在几种不同频率条件下测量了ΔVds的栅偏压依赖性。结果清楚地表明血浆反应的发生， ...更多信息在太赫兹范围内。首次证实了在宽的太赫兹范围内，等离子体共振频率由栅极偏压外部控制。其次，我们对0.15 μm栅长InGaP/InGaAs/GaAs赝晶HEMT（pHEMT）的等离子体共振强度的频率依赖性进行了首次观测。当适当地施加栅极偏压以在沟道中诱导足够的电子密度时，清楚地观察到具有双峰的共振。在1.9THz处的第一峰值对应于基本共振，而在5.8THz处的第二峰值对应于三次谐波共振。观察到的共振频率吻合良好的理论计算。探测到的等离子体共振实际上是非辐射模振荡，在mW激发功率下，其能量估计为nW量级。将等离子体振荡转换为电磁辐射的装置应当被应用到器件结构上。此外，提高量子效率是关键。“这些都是未来的主题。少