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Exploring Novel Electromagnetic Circuits Based on Management of Low-Dimensional Plasmonic Dispersion

Exploring Novel Electromagnetic Circuits Based on Management of Low-Dimensional Plasmonic Dispersion
探索基于低维等离子体色散管理的新型电磁电路
批准号:
18106006
负责人:
OTSUJI Taiichi
金额:
$72.13万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (S)
财政年份:
2006
资助国家:
日本
项目状态:
已结题
起止时间:
2006 至 2010

项目摘要

项目成果

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中文摘要
翻译
本研究探索基于毫米波至太赫兹波域低维等离子体色散管理的新概念电磁器件、电路和系统,目的是实现能够实现超宽带信号处理功能的室温操作集成电路/系统。研究主要集中在利用纳米超材料加工技术在包括石墨烯在内的半导体异质结构材料系统中产生的四个主要的电路功能:非凡传输、放大、频率转换和时间逻辑。
英文摘要
This research explored new conceptual electromagnetic devices, circuits, and systems based on management of low-dimensional plasmonic dispersion in the millimeter-wave to terahertz-wave domain for the purpose of realization of room-temperature operating integrated circuits/systems which enables ultra-broadband signal-processing functions. Study was essentially focused on the four primarily important circuit functions :' extraordinary transmission',' amplification',' frequency conversion', and ' temporal logic', which has been created in semiconductor heterostructure material systems including graphene by using nanometer-metamaterial processing technology.
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DOI: 10.1063/1.2426904
发表时间: 2007-01
期刊: Journal of Applied Physics
影响因子: 3.2
作者: [V. Ryzhii;A. Satou;T. Otsuji]
通讯作者: V. Ryzhii;A. Satou;T. Otsuji
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [Y.Umahashi, Y.Kambayashi, M.Kato, Y.Hasegawa, H.Amano, and K.Usami, 尾辻泰一]
通讯作者: 尾辻泰一
Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant nano-transistorsm
InGaP/InGaAs/GaAs光栅双耦合等离子体共振纳米晶体管的太赫兹辐射发射
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [椎名公康, 近藤正章, 今井雅, 中村宏, 南谷崇, 辺見 一広, 尾辻泰一]
通讯作者: 尾辻泰一
Room Temperature Terahertz Imaging by a GaAs-HEMT Transistor Associated with a THz Time Domain Spectrometer
GaAs-HEMT 晶体管与太赫兹时域光谱仪联合进行的室温太赫兹成像
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [Kan, Q., Jinno, S., Yamamoto, H., and Okayama, H., Y. Uchida, エルファティミアブデルアハド]
通讯作者: エルファティミアブデルアハド
271
    Extraordinary plasmon instabilities in graphene Dirac Fermions and their terahertz functional device applications
    • 批准号:
      20K20349
    • 项目类别:
      Grant-in-Aid for Challenging Research (Pioneering)
    • 资助金额:
      $16.47万
    • 财政年份:
      2018
    • 负责人:
      OTSUJI Taiichi
    • 依托单位:
    Creation of 2D-Atomically-Thin-Layered Heterojunctions and their Applications to Novel Terahertz Photonic Devices
    • 批准号:
      16H06361
    • 项目类别:
      Grant-in-Aid for Scientific Research (S)
    • 资助金额:
      $120.31万
    • 财政年份:
      2016
    • 负责人:
      OTSUJI Taiichi
    • 依托单位:
    Creation of graphene terahertz lasers
    • 批准号:
      23000008
    • 项目类别:
      Grant-in-Aid for Specially Promoted Research
    • 资助金额:
      $295.69万
    • 财政年份:
      2011
    • 负责人:
      OTSUJI Taiichi
    • 依托单位:
    Study on Optically Injection-Locked Terahertz Oscillation in Plasma-Wave Resonant Transistors
    • 批准号:
      13450147
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $6.21万
    • 财政年份:
      2001
    • 负责人:
      OTSUJI Taiichi
    • 依托单位:
    海外基金