Antiferromagnetic Skyrmions

我们证明了反铁磁Skyrmions的非平凡的磁性织构促进了流动电子的非零拓扑自旋霍尔效应。这种效应导致非绝热扭矩的显著增强，因此提高了Skyrmion迁移率[Phys. Rev. Lett. 121，097204（2018）]。此外，我们确定了由磁各向异性梯度诱导的反铁磁skyrmion的动力学[Phys. Rev. B 98，134448（2018）]。我们还表明，基于skyrmion的自旋力矩纳米振荡器是潜在的下一代微波信号发生器。我们提出利用反铁磁skyrmion的圆周运动来产生振荡信号，以克服这一障碍。此外，反铁磁skyrmion在纳米盘中的圆周运动的速度被解析地推导出，并且与模拟很好地一致[Appl. Phys. Lett.对具有Dzyaloshinskiii-Moriya相互作用的系统中的skyrmions和畴壁进行了微磁模拟，并在Phys. Rev. B 99，060407（R）（2019）中提出了畴壁运动的分析理论。研究了Co/Ru/Co反铁磁体薄膜的磁畴结构和动力学。我们已经表明，戏剧性的效果产生的拓扑缺陷，包括在这些结构中的双畴壁之间的相互作用。这些功能使我们能够在合成反铁磁体中对畴壁运动进行增强控制，并具有未来设备的潜力[Sci. Rep. 8，15794（2018）]。

We demonstrated that the nontrivial magnetic texture of antiferromagnetic Skyrmions promotes a nonvanishing topological spin Hall effect on the flowing electrons. This effect results in a substantial enhancement of the nonadiabatic torque and, hence, improves the Skyrmion mobility [Phys. Rev. Lett. 121, 097204 (2018)]. Furthermore, we identified the dynamics of the antiferromagnetic skyrmion induced by a magnetic anisotropy gradient [Phys. Rev. B 98, 134448 (2018)]. We also showed that skyrmion-based spin torque nano-oscillators are potential next-generation microwave signal generators. We proposed to use the circular motion of an antiferromagnetic skyrmion to create an oscillation signal to overcome this obstacle. Furthermore, the speed of the circular motion for an antiferromagnetic skyrmion in a nanodisk was analytically derived and agreed well with simulations [Appl. Phys. Lett. 114, 042402 (2019)].Micromagnetic simulations for skyrmions and domain walls in the system with Dzyaloshinskii-Moriya interaction were performed and an analytical theory for domain wall motion resulted in Phys. Rev. B 99, 060407(R) (2019). We studied the structure and dynamics of magnetic domains in synthetic antiferromagnets based on Co/Ru/Co films. We have shown that dramatic effects arise from the interaction among the topological defects comprising the dual domain walls in these structures. These features allowed us to work on the enhanced control of domain-wall motion in synthetic antiferromagnets with the potential for future devices [Sci. Rep. 8, 15794 (2018)].