FOR 485: Quantum Optics in Semiconductor Nanostructures

FOR 485：半导体纳米结构中的量子光学

• 批准号: 5469731
• 金额: --
• 依托单位: Institut für Physik
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2002
• 资助国家: 德国
• 起止时间: 2001-12-31 至 2007-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5469731?language=en
• 关键词: 485; Quantum; Optics; Semiconductor; Nanostructures

The goal of the research unit is to combine the methods of Quantum Optics with the recent developments in Semiconductor Physics made possible by advances in design and preparation of low dimensional semiconductor structures on a nanoscopic scale. This new and innovative field of Semiconductor Quantum Optics, which has emerged in the last few years, offers the possibility of both a fundamental understanding of matter-light interaction on a quantum level and the realization of unique devices for quantum optic experiments. The work will concentrate on the following areas:-- generation of squeezed light from semiconductors,-- cavity Quantum Electrodynamics in the weak and strong coupling regime,-- generation of entangled photons, and-- quantum dot laser structures with large spontaneous emission factor. In the research unit, we look for answers to questions on the physical mechanisms, demonstrate the various quantum optical effects in semiconductor structures and provide a thorough understanding by a quantum theoretical treatment of both semiconductor and light field. Besides these interests from basics physics, the developed concepts might be transferred into future applications such as high efficiency quantum light sources or single photon emitters.

该研究单位的目标是将量子光学的方法与半导体物理学的最新发展结合起来，这是由于在纳米尺度上设计和制备低维半导体结构的进步使之成为可能。最近几年出现的半导体量子光学这一新的创新领域，为在量子水平上从根本上理解物质-光相互作用和实现用于量子光学实验的独特设备提供了可能性。这项工作将集中在以下领域：--半导体压缩光的产生，--弱耦合和强耦合状态下的腔量子电动力学，--纠缠光子的产生，--具有大自发辐射因子的量子点激光器结构。在研究单元中，我们寻找物理机制问题的答案，演示半导体结构中的各种量子光学效应，并通过对半导体和光场的量子理论处理来提供深入的理解。除了基础物理学的这些兴趣之外，所开发的概念可能会转移到未来的应用中，如高效量子光源或单光子发射器。