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SFB 348: Nanometer Semiconductor Devices: Fundamentals-Concepts-Realisations

SFB 348: Nanometer Semiconductor Devices: Fundamentals-Concepts-Realisations
SFB 348:纳米半导体器件:基础-概念-实现
批准号:
5478319
负责人:
金额:
$0.0万
依托单位国家:
德国
项目类别:
Collaborative Research Centres
财政年份:
1991
资助国家:
德国
项目状态:
已结题
起止时间:
1990-12-31 至 2002-12-31

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中文摘要
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英文摘要
The goal of the collaborative research centre is to investigate the principles of nanostructuring and to develop new techniques as well as experimental and theoretical methods for resulting novel devices. This goal has already been achieved in many projects during the previous 10 years of funding. Typical examples are novel laser diodes (VCSEL for 1.55µm), powerful microwave devices, nanometer growth methods (CEO) or photonic memories. The proven cooperation between mainly fundamental physics based projects treated in part A (Fundamentals) and application-oriented research projects treated in part B (Novel Devices) will be continued also in the final funding period until 2003 and will yield additional innovations on nanometer semiconductor devices.
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