SFB 348: Nanometer Semiconductor Devices: Fundamentals-Concepts-Realisations

合作研究中心的目标是研究纳米结构的原理，开发新技术，以及实验和理论方法，以产生新的设备。在过去10年的资助中，许多项目已经实现了这一目标。典型的例子是新型激光二极管（VCSEL为1.55 μ m），强大的微波器件，纳米生长方法（CEO）或光子存储器。在A部分（基础）处理的主要基于基础物理的项目和B部分（新型器件）处理的面向应用的研究项目之间已证实的合作将在2003年的最后资助期内继续进行，并将产生更多的纳米半导体器件创新。

The goal of the collaborative research centre is to investigate the principles of nanostructuring and to develop new techniques as well as experimental and theoretical methods for resulting novel devices. This goal has already been achieved in many projects during the previous 10 years of funding. Typical examples are novel laser diodes (VCSEL for 1.55µm), powerful microwave devices, nanometer growth methods (CEO) or photonic memories. The proven cooperation between mainly fundamental physics based projects treated in part A (Fundamentals) and application-oriented research projects treated in part B (Novel Devices) will be continued also in the final funding period until 2003 and will yield additional innovations on nanometer semiconductor devices.