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Optimum design and evaluation by spectroscopic ellipsometry of optical thin films for DUV lithography

DUV 光刻用光学薄膜的椭圆偏振光谱优化设计与评估

基本信息

批准号：
09650048
负责人：
YAMAGUCHI Tomuo
金额：
$ 2.18万
依托单位：
Shizuoka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650048/
关键词：
DUV Lithography Super resolution masks Single tone phase shifting mask a-SiNX Spectroscopic ellipsometry in-situ monitoring of film growth substrate temperature monitoring RF sputtering empirical dielectric constants a-SiN_X 位相反転マスク

项目摘要

Amorphous silicon nitride films were investigated as an example of optical thin films for super resolution masks and anti-reflection coatings for suppressing halation in a photo-resist for practical ultimate optical lithography using ArF excimer laser (wavelength 193 nm).Half-tone phase shifting masks for super resolution consists of semi-transparent masking area where the phase shift becomes π against the transparent area so that sharp boundaries are realized. In order to design single tone phase shifting masks and anti-reflection coatings for ArF lithography, optical constants of the film material at 193 nm should be known. We developed a method for estimating optical constants at 193 nm from the spectroellipsometric data for wavelength longer than 240 nm.We also developed an in situ spectroellipsometer and a method of monitoring temperature and thickness of a-SiNx during RF sputtering. Films sputtered in an atmosphere of Ar and NィイD22ィエD2 mixture exhibit a composition which changes systematically between a-Si and a-SiィイD23ィエD2NィイD24ィエD2 according to the gas composition. Those films are found to be hopeful for the both purposes.

以非晶氮化硅薄膜为例，研究了用于超分辨掩模的光学薄膜和用于抑制光刻胶中晕光的减反射涂层，以实现实用的极限光学光刻(波长193 nm)。用于超分辨的半色调相移掩模由半透明掩模区域组成，其中相移相对于透明区域变为π，从而实现了尖锐的边界。为了设计用于ArF光刻的单色相移掩模和减反射膜，必须知道薄膜材料在193 nm处的光学常数。我们开发了一种从波长大于240 nm的椭圆偏振光谱数据中估计193 nm处的光学常数的方法。我们还开发了一台原位椭圆偏振光谱仪和一种监测射频溅射过程中a-SiNx的温度和厚度的方法。在Ar和NィイD22ィエD2混合气氛中溅射的薄膜的成分随气体成分的不同而在a-Si和a-SiィイD23ィエD2NィイD24ィエD2之间有系统地变化。这些电影被发现对这两个目的都是有希望的。