STUDY ON MECHANISM OF CLUSTER FORMATION THROUGH ELECTRONIC SPUTTERING INDUCED BY SWIFT HEAVY IONS

快重离子电子溅射团簇形成机理研究

基本信息

  • 批准号:
    09480099
  • 负责人:
  • 金额:
    $ 2.5万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    1997
  • 资助国家:
    日本
  • 起止时间:
    1997 至 1999
  • 项目状态:
    已结题

项目摘要

The yield and emission energy distribution of secondary ions have been systematically measured for Al Si AlィイD22ィエD2OィイD23ィエD2 and SiOィイD22ィエD2 bombarded by Si, Cu and Ag ions at an impact energy region of MeV, where the electronic stopping power dominates over the nuclear stopping power. Singly charged cluster ions as well as multiply charged monatomic ions were observed in the case of the insulator targets. Dominant species of the cluster ions were Si(SiOィイD22ィエD2)ィイD1+ィエD1ィイD2xィエD2 and SiO(SiOィイD22ィエD2)ィイD1+ィエD1ィイD2xィエD2 (x is an integer )for SiOィイD22ィエD2 and (AlィイD22ィエD2OィイD23ィエD2)ィイD1+ィエD1ィイD2xィエD2, AlO(AlィイD22ィエD2OィイD23ィエD2)ィイD1+ィエD1ィイD2xィエD2and AlィイD22ィエD2OィイD22ィエD2(AlィイD22ィエD2OィイD23ィエD2)ィイD1+ィエD1ィイD2xィエD2 for AlィイD22ィエD2OィイD23ィエD2. For the conductive targets only singly and multiply charged monatomic ions were observed. The obtained emission energy for atomic ions depends not only on projectiles but also on the electric charge q. The energy distribution of the atomic ions emitted from the conductive targets is asymmetric extending to a high-energy side and is rather high compared with that for the insulators. The energy distribution for cluster ions is very narrow compared with that for the atomic ions. The mean energy for the cluster ions hardly depends on the size of cluster. These results combined with the yield dependence on the electronic stopping power show that the atomic ions are produced from the hot track region through the sequential process of ionization and recoil caused by the projectiles and forced to move by the electric repulsive force. The cluster ions are formed in the periphery of the track region.
本文系统地测量了Si、Cu和Ag离子在MeV能量范围内轰击Al Si Al Al_2O_3 D_22、Si Al Al_2O_3 D_23、Si Al Al_2O_3 D_22、Si Si Al Al_2O_3 D_22、Si Si Al Al_2O_3 D_23 D_2时的二次离子产额和发射能量分布。在绝缘体靶的情况下,观察到单电荷团簇离子和多电荷单原子离子。团簇离子的主要种类为Si(SiO ↓ [2] O ↓ [2] D ↓ [2])O ↓ [1] O ↓ [2] O ↓ [(SiO_2)_2O_3 D_22(SiO_2)_2O_3 D_1 + SiO_2 D_1(SiO_2)_2O_3 D_2x(SiO_2)_2O_3 D_2(x是整数),对于SiO ↓ [2] D ↓ [22] D ↓ [2],(Al 22O3)D23(Al 22O3)D23(Al 22O3)D2(Al 22O3)D2(Al 22O3)AlO(Al Al2O3 D22 Al2O3 D23 Al2O3 D2)Al2O3 D1+ Al2O3 D1 Al2O3 D2x Al2O3 D2和Al Al2O3 D22 Al2O3 D22 Al2O3 D2(Al Al2O3 D23 Al2O3 D2)Al2O3 D1+ Al2O3 D1 Al2O3 D2x Al2O3 D2。对于导电目标,仅观察到单电荷和多电荷的单原子离子。所得到的原子离子的发射能量不仅取决于射弹,而且还取决于电荷q。从导电靶发射的原子离子的能量分布是不对称的,延伸到高能量侧,并且与绝缘体相比相当高。团簇离子的能量分布比原子离子的能量分布窄。团簇离子的平均能量与团簇的大小关系不大。结合产率对电子阻止本领的依赖关系,这些结果表明,原子离子是从热径迹区通过电离和反冲的顺序过程产生的弹丸和被迫移动的电斥力。在轨道区域的周边形成团簇离子。

项目成果

期刊论文数量(0)
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今西信嗣: "TOF Study on Electronic Sputtering of SiO2 Bombarded by MeV Energy Heavy Ions"Atomic Collision Research in Japan Progress Report. 24. 52-53 (1998)
Nobutsugu Imanishi:“MeV 能量重离子轰击 SiO2 电子溅射的 TOF 研究”日本原子碰撞研究进展报告。 24. 52-53 (1998)
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N. Imanishi: "Electronic Sputtering Process of SiOィイD22ィエD2 under Heavy Ion Bombardment"Nuclear Instruments and Methods B. 135. 424-429 (1998)
N. Imanishi:“重离子轰击下 SiOiD22 的电子溅射过程”核仪器和方法 B. 135. 424-429 (1998)
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    0
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今西信嗣: "Crystallographic Azimuthal-Angle Dependence of the Neutral Fraction of Hydrogen Emerging from GaAs(110)"Nuclear Instruments and Methods in Physics Research B. 1135-1139 (1998)
Nobutsugu Imanishi:“来自 GaAs(110) 的氢的中性分数的晶体方位角依赖性”物理研究中的核仪器和方法 B. 1135-1139 (1998)
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    0
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N. Imanishi: "Electronic Sputtering from a SiOィイD22ィエD2 Target Bombarded by Heavy Ions"Proceedings of the 2nd Japan-Russia Symposium on Interaction of Fast Charged Particles with Solids. 94-105 (1998)
N. Imanishi:“重离子轰击 SiO2D22 靶材的电子溅射”第二届日本-俄罗斯快带电粒子与固体相互作用研讨会论文集 94-105 (1998)。
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    0
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今西信嗣: "Crystallographic Azimuthal-Angle Dependence of the Neutral Fration of Hydrogen Emerging from GaAs (110)" Nuclear Instruments and Methods in Physics Research. B 136. 1135-1139 (1998)
Nobutsugu Imanishi:“GaAs 中产生的氢的中性分数的晶体方位角依赖性 (110)” 物理研究中的核仪器和方法 B 136. 1135-1139 (1998)。
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IMANISHI Nobutsugu其他文献

IMANISHI Nobutsugu的其他文献

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{{ truncateString('IMANISHI Nobutsugu', 18)}}的其他基金

Methodological Development of Large Cluster Ion Generation by Swift-Heavy-Ion-Induced Electronic Sputtering
快重离子诱导电子溅射产生大团簇离子的方法进展
  • 批准号:
    13558061
  • 财政年份:
    2001
  • 资助金额:
    $ 2.5万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Synthesis of Berried Nanocrystals by Heavy-Ion Implantation and Stabilized High-Efficient Luminescence
重离子注入合成浆状纳米晶及稳定高效发光
  • 批准号:
    12480138
  • 财政年份:
    2000
  • 资助金额:
    $ 2.5万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
DEVELOPMENT OF HIGH BRILLIANT X RAY MICROBEAM BY A RESONANT TRANSITION RADIATION METHOD WITH A LOW ENERGY ELECTRON ACCELERATOR
低能电子加速器共振跃迁辐射法研制高亮度X射线微束
  • 批准号:
    10558079
  • 财政年份:
    1998
  • 资助金额:
    $ 2.5万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
PRODUCTION OF HIGH-BRILLIANT COHERENT X-RAYS BY THE MULTIPLE INTERFERENCE OF TRANSITION RADIATION
跃迁辐射多重干涉产生高亮度相干X射线
  • 批准号:
    06554012
  • 财政年份:
    1994
  • 资助金额:
    $ 2.5万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Emission of Highly-Charged Ions from Solid Bombarded by Energetic Heavy Io
高能重 Io 轰击固体中高电荷离子的发射
  • 批准号:
    02808040
  • 财政年份:
    1990
  • 资助金额:
    $ 2.5万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
Effects of Impurities in the Cycle of Muon Catalyzed Nuclear Fusion (muCF)
杂质对 μ 子催化核聚变 (muCF) 循环的影响
  • 批准号:
    60580180
  • 财政年份:
    1985
  • 资助金额:
    $ 2.5万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

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    21K07673
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    2021
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重离子束LET对癌症转移的影响
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Radiosensitization of heavy-ion beam based on modifying early phase redox reaction
基于改进早期氧化还原反应的重离子束放射增敏
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    18K07695
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改进型高精度重离子束探针研究径向电场二维结构形成及湍流输运
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    16K06946
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acceleration and control of intense heavy ion beam using four-beam RFQ linac
使用四束 RFQ 直线加速器加速和控制强重离子束
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    26246042
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