课题基金 / 基金详情

STUDY ON MECHANISM OF CLUSTER FORMATION THROUGH ELECTRONIC SPUTTERING INDUCED BY SWIFT HEAVY IONS

STUDY ON MECHANISM OF CLUSTER FORMATION THROUGH ELECTRONIC SPUTTERING INDUCED BY SWIFT HEAVY IONS
快重离子电子溅射团簇形成机理研究
批准号:
09480099
负责人:
IMANISHI Nobutsugu
金额:
$2.5万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1999

项目摘要

项目成果

IMANISHI Nobutsugu的其他基金

相似基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
The yield and emission energy distribution of secondary ions have been systematically measured for Al Si AlィイD22ィエD2OィイD23ィエD2 and SiOィイD22ィエD2 bombarded by Si, Cu and Ag ions at an impact energy region of MeV, where the electronic stopping power dominates over the nuclear stopping power. Singly charged cluster ions as well as multiply charged monatomic ions were observed in the case of the insulator targets. Dominant species of the cluster ions were Si(SiOィイD22ィエD2)ィイD1+ィエD1ィイD2xィエD2 and SiO(SiOィイD22ィエD2)ィイD1+ィエD1ィイD2xィエD2 (x is an integer )for SiOィイD22ィエD2 and (AlィイD22ィエD2OィイD23ィエD2)ィイD1+ィエD1ィイD2xィエD2, AlO(AlィイD22ィエD2OィイD23ィエD2)ィイD1+ィエD1ィイD2xィエD2and AlィイD22ィエD2OィイD22ィエD2(AlィイD22ィエD2OィイD23ィエD2)ィイD1+ィエD1ィイD2xィエD2 for AlィイD22ィエD2OィイD23ィエD2. For the conductive targets only singly and multiply charged monatomic ions were observed. The obtained emission energy for atomic ions depends not only on projectiles but also on the electric charge q. The energy distribution of the atomic ions emitted from the conductive targets is asymmetric extending to a high-energy side and is rather high compared with that for the insulators. The energy distribution for cluster ions is very narrow compared with that for the atomic ions. The mean energy for the cluster ions hardly depends on the size of cluster. These results combined with the yield dependence on the electronic stopping power show that the atomic ions are produced from the hot track region through the sequential process of ionization and recoil caused by the projectiles and forced to move by the electric repulsive force. The cluster ions are formed in the periphery of the track region.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
今西信嗣: "TOF Study on Electronic Sputtering of SiO2 Bombarded by MeV Energy Heavy Ions"Atomic Collision Research in Japan Progress Report. 24. 52-53 (1998)
Nobutsugu Imanishi:“MeV 能量重离子轰击 SiO2 电子溅射的 TOF 研究”日本原子碰撞研究进展报告。 24. 52-53 (1998)
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
N. Imanishi: "Electronic Sputtering Process of SiOィイD22ィエD2 under Heavy Ion Bombardment"Nuclear Instruments and Methods B. 135. 424-429 (1998)
N. Imanishi:“重离子轰击下 SiOiD22 的电子溅射过程”核仪器和方法 B. 135. 424-429 (1998)
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
今西信嗣: "Crystallographic Azimuthal-Angle Dependence of the Neutral Fraction of Hydrogen Emerging from GaAs(110)"Nuclear Instruments and Methods in Physics Research B. 1135-1139 (1998)
Nobutsugu Imanishi:“来自 GaAs(110) 的氢的中性分数的晶体方位角依赖性”物理研究中的核仪器和方法 B. 1135-1139 (1998)
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
N. Imanishi: "Electronic Sputtering from a SiOィイD22ィエD2 Target Bombarded by Heavy Ions"Proceedings of the 2nd Japan-Russia Symposium on Interaction of Fast Charged Particles with Solids. 94-105 (1998)
N. Imanishi:“重离子轰击 SiO2D22 靶材的电子溅射”第二届日本-俄罗斯快带电粒子与固体相互作用研讨会论文集 94-105 (1998)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
22
    Methodological Development of Large Cluster Ion Generation by Swift-Heavy-Ion-Induced Electronic Sputtering
    • 批准号:
      13558061
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $7.1万
    • 财政年份:
      2001
    • 负责人:
      IMANISHI Nobutsugu
    • 依托单位:
    Synthesis of Berried Nanocrystals by Heavy-Ion Implantation and Stabilized High-Efficient Luminescence
    • 批准号:
      12480138
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $8.38万
    • 财政年份:
      2000
    • 负责人:
      IMANISHI Nobutsugu
    • 依托单位:
    DEVELOPMENT OF HIGH BRILLIANT X RAY MICROBEAM BY A RESONANT TRANSITION RADIATION METHOD WITH A LOW ENERGY ELECTRON ACCELERATOR
    • 批准号:
      10558079
    • 项目类别:
      Grant-in-Aid for Scientific Research (B).
    • 资助金额:
      $4.1万
    • 财政年份:
      1998
    • 负责人:
      IMANISHI Nobutsugu
    • 依托单位:
    PRODUCTION OF HIGH-BRILLIANT COHERENT X-RAYS BY THE MULTIPLE INTERFERENCE OF TRANSITION RADIATION
    • 批准号:
      06554012
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research (B)
    • 资助金额:
      $4.99万
    • 财政年份:
      1994
    • 负责人:
      IMANISHI Nobutsugu
    • 依托单位:
    海外基金