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Synthesis of Berried Nanocrystals by Heavy-Ion Implantation and Stabilized High-Efficient Luminescence

重离子注入合成浆状纳米晶及稳定高效发光

基本信息

批准号：
12480138
负责人：
IMANISHI Nobutsugu
金额：
$ 8.38万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12480138/
关键词：
NANOCRYSTAL LUMINESCENCE HEAVY-ION IMPLANTATION HYDROGEN BEHAVIOR QUANTUM DOT ANNEALING SiO_2 Si

项目摘要

The purpose of this work is to produce nanocrystals of 1-10 nm in diameter by heavy ion implantation and subsequent thermal annealing, to reveal the basic synthesis mechanism, to establish luminescence-related quantum states of crystalline interface and to activate the nanocrystals as quantum dots with stable luminescence property. These will contribute to the application as photo devises and to understanding of radiation-induced fundamental processes in solids1. Fabrication of Ge nanocrystals in SiO_2 was studied for a procedure of implantation and subsequent thermal annealing. A comparison between experimental and simulated changes of the depth profile of implanted Ge atoms led to effective values of solubility and diffusion coefficient of Ge atoms in the SiO_2 matrix. The mean diameter of precipitates calculated using those values are 10-15 nm, depending on ion dose and annealing duration.2. Hydrogen plays very important role in luminescence of Si nanocrystals embedded in SiO_2. Si-containing SiO_2 samples produced by ion implantation followed by thermal annealing are very complex systems having high density defects, locally concentrated Si segregates and Si nanocrystals. Hydrogen was implanted into the system which was controlled by applying an appropriate annealing procedure, and the trapping-detrapping process of hydrogen has been revealed by applying the elastic recoil detection technique. It was found for hydrogen to successfully terminate Si dangling bonds on the interface of Si nanocrystal/SiO_2 under a controlled implantation and thermal annealing condition.3. Broad photoluminescence was observed around wave lengths of 720 nm and 550 nm, respectively, for Si and Ge implanted samples of SiO_2 followed by thermal annealing in N_2 atmosphere.

本工作的目的是通过重离子注入和随后的热退火制备直径为1-10 nm的纳米晶，揭示其基本合成机理，建立与发光相关的晶界面量子态，并将纳米晶激活为具有稳定发光性能的量子点。这些将有助于应用程序作为光器件和理解辐射诱导的基本过程中solids 1。研究了在SiO_2中通过离子注入和热退火制备Ge纳米晶的过程。通过对Ge原子注入深度分布的模拟和实验结果的比较，得到了Ge原子在SiO_2基体中的溶解度和扩散系数的有效值。利用这些值计算的沉淀物的平均直径为10-15 nm，取决于离子剂量和退火持续时间。氢对镶嵌在SiO_2中的硅纳米晶的发光起着非常重要的作用。用离子注入和热退火方法制备的含硅SiO_2样品是一个非常复杂的系统，具有高密度的缺陷、局部集中的硅偏析和硅纳米晶。采用适当的退火工艺控制氢离子注入系统，利用弹性反冲探测技术研究了氢离子的俘获-释放过程。在可控的注入和热退火条件下，氢成功地终止了SiO_2/SiO_2界面上的Si悬挂键. Si和Ge离子注入SiO_2样品，在N_2气氛中退火后，观察到波长分别为720 nm和550 nm的宽光致发光。