Verification of ion implantation method using intense pulsed heavy ion beam for next generation semiconductor
Verification of ion implantation method using intense pulsed heavy ion beam for next generation semiconductor
批准号:
24540534
负责人:
ITO Hiroaki
金额:
$3.16万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2012
资助国家:
日本
项目状态:
已结题
起止时间:
2012-04-01 至 2015-03-31
中文摘要
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英文摘要
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二重同軸ガラス管構造を用いた大気圧プラズマジェットの特性評価
采用双同轴玻璃管结构表征大气压等离子体射流
DOI:
--
发表时间:
2015
期刊:
影响因子:
--
作者:
[大山耕平, 中山智裕, 大橋隼人, 伊藤弘昭]
通讯作者:
伊藤弘昭
Characteristics of Underwater Shock Wave Generated by High Current Short Pulse Discharge
大电流短脉冲放电水下冲击波特性
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[H.Ito, K.Miyata]
通讯作者:
K.Miyata
研究室ホームページ
实验室主页
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
両極性パルス加速器によるパルス重イオンビーム発生とその特性
双极脉冲加速器产生脉冲重离子束及其特性
DOI:
--
发表时间:
2015
期刊:
電気学会論文誌A
影响因子:
--
作者:
[谷岡裕大, 壷井基裕, 伊藤弘昭,北島一樹]
通讯作者:
伊藤弘昭,北島一樹
プラズマフォーカスにおける充填圧に対するエネルギーイオンビームの放射分布特性
等离子体焦点内高能离子束辐射分布特性随填充压力的变化
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[H.Ito, K.Miyata, 宮田康佑,中谷泰彦,升方勝己,伊藤弘昭, 篠川尚吾,東 勇佑,下根大侑,升方勝己,伊藤弘昭, 入江仁,岸本竜太,伊藤弘昭, 入江仁,岸本竜太,伊藤弘昭]
通讯作者:
入江仁,岸本竜太,伊藤弘昭
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