Synthesis and Properties of New Layr Structured Superconductors
新型层状结构超导体的合成与性能
基本信息
- 批准号:09450326
- 负责人:
- 金额:$ 8.51万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:1997
- 资助国家:日本
- 起止时间:1997 至 1998
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In a previous study, we derived a new type of superconductor from the layer structured beta-ZrNC1 by electron doping of the nitride layers through lithium intercalation. This finding suggests that the nitride layers may become good matrices of superconductivity like CuO_2 layers of copper oxide superconductors. In this study, a series of beta-ZrNCl type layered nitrides have been prepared and the possibility of superconductivity has been examined after electron doping. Developments of new layer structured nitride superconductors have also been studied. Some important results of this study are the following :1. A new high Tc superconductor with Tc as high as 25.5 K was obtained by intercalation of lithium in beta-HfNCl. Note that the Tc (25.5 K) is much higher than the Tc of HfN with the rock-salt structure.2. All combinations of MNX ( M = Zr, Hf ; X = C1, Br, I) crystals were prepared by using high pressure and high temperature conditions. All of the crystals showed superconductivity by electron doping. The Tcs were mainly determined by the kinds of metal nitride layers concerned.3. Intercalation compounds of alpha-TiNCI having a different type of nitride layers from that of beta ZrNCl structure were prepared by the reaction with pyridine. The intercalation compounds showed superconductivity with Tc at 6 K.This is the first superconductor derived from a layered semiconductor by intercalation of an organic base as electron donor.4. Artificial superlattice films of ZrN/Si_3N_4 were prepared on Si(111) substrate by a laser abration technique. The electron doping into the films is now under investigation.
在以前的研究中,我们通过嵌锂对氮化物层进行电子掺杂,从层状结构的β-ZrNC1中得到了一种新型的超导体。这一发现表明,氮化物层可能成为很好的超导基质,就像铜氧化物超导体的CuO2层一样。本研究制备了一系列β-ZrNCl型层状氮化物,并研究了电子掺杂后超导电性的可能性。还研究了新型层状结构氮化物超导体的发展。本文的主要研究结果如下:1.通过在β-HfNCl中嵌入锂离子,得到了一种高T_c超导体,其T_c高达25.5K。值得注意的是,Tc(25.5K)远高于具有岩盐结构的HfN的Tc。在高温高压条件下合成了各种组合的MnX(M=Zr,Hf;X=C1,Br1,I)晶体。所有的晶体都通过电子掺杂表现出超导性。TCS主要取决于所涉及的金属氮化层的种类。通过与吡啶反应,合成了具有不同氮化物层类型的α-TiNCI插层化合物和β-ZrNCl型氮化物插层化合物。该插层化合物具有超导电性,其T_c为6K,这是第一个以有机碱为电子给体插层层状半导体的超导体。采用激光刻蚀技术在Si(111)衬底上制备了ZrN/Si3N4人工超晶格薄膜。电子掺杂到薄膜中的问题目前正在调查中。
项目成果
期刊论文数量(0)
专著数量(0)
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S.Shamoto: "Hydrogen in β-ZrNCl" J.Phys.Chem.Solid.in press. (1999)
S. Shamoto:“β-ZrNCl 中的氢”J.Phys.Chem.Solid.in press(1999 年)。
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S.Yamanaka, K.Hotehama, H.Kawaji: "Superconductivity at 25.5 K in Electron-doped Layred Hafnium Nitride" Nature. 392. 580-582 (1998)
S.Yamanaka、K.Hotehama、H.Kawaji:“电子掺杂层状氮化铪在 25.5 K 下的超导性”《自然》。
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- 影响因子:0
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- 通讯作者:
S.Yamanaka, K.Hotehama, H.Kawaji: Superconductivity in Electron-doped Layered Metal Nitrides. "Advances in Superconductivity XI (ISS'98)" Springer-Verlag (in press, 1999),
S.Yamanaka、K.Hotehama、H.Kawaji:电子掺杂层状金属氮化物中的超导性。
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- 影响因子:0
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山中昭司: "インターカレーションによる新物質創製-層状窒化物高温超伝導体の発見" 応用物理. 68・4. 384-390 (1999)
山中正司:“通过插层创造新材料 - 层状氮化物高温超导体的发现”应用物理 68・4(1999)。
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- 影响因子:0
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S.Yamanaka: "New Layr Structured Nitride Superconductors" Low-Temperature Center News of Hiroshima University. (7). 23-25 (1997)
S.Yamanaka:“新型层状结构氮化物超导体”广岛大学低温中心新闻。
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YAMANAKA Shoji其他文献
YAMANAKA Shoji的其他文献
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17590355 - 财政年份:2005
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- 批准号:
14570757 - 财政年份:2002
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14350461 - 财政年份:2002
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10555313 - 财政年份:1998
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