High density InGaAs/AlGaAs quantum wires on (775)B GaAs substrates

High-Density and highly uniform GaAs/（GaAs）D24-D2（AlAs）D2 self-organized quantum wires （QWRs） formed on （775）B GaAs substrates were applied to laser diodes （0.7/m）。Self-organized （775）B InGaAs/（GaAs）/D2m/D2（AlAs）/D2 pseudomorphic QWRs and InGaAs/InAlAs QWRs were fabricated for longer？light emission.1。高密度GaAs QWR lasers on the （775）B GaAs substratesGraded-index separate-confinement heterostructurelasers with the高密度GaAs/（GaAs）-D24-D2（AlAs-D2）-D2QWRs in an active region were fabricated on （775）B GaAs substrates。（775）B QWR激光器在房间温度（20 ° C）下显示激光振荡。Threshold current Density as low as 3 kA/cm D1.这是对自组织QWR的第一份报告。激光器被制造成自然形成的表面（或接口） corrugation的用途，它表明了它们的优秀光学性能。InイD20.15 GイD20.85イD2As/GaAs QWRs grown on （553）A， and （221）A GaAs substratesSurface corrugation with a period of 20 nm and a height of 1. 5 nm of an InイD20. 15イD2GaイD20. 85イD2As layer grown on the （553）A and （221）A GaAs substrates was used to form QWRs。（553）A and （221）A In 0.15 Ga0.85 As/GaAs QWRs were longer than 860 nm。光最大的一半宽度（FWHM）的光最大宽度（PL）为7.8 meV，因此最小的自组织QWR.3。InGaAs QWRs on （775）B GaAs substrates.InイイD20.1イイD2GaイD20.9イイD2As/（GaAs）イD26イイD2（AlAs）イD21イD2QWRs with an emission wavelength of 830 nm， a polarization Degree of 0.1 and PL-FWHM = 12 meV were fabricated.4。InGaAs/InAlAs在（775）BInP基础上的QWR结构与InGaAs/InAlAs QWRS拉丁美洲与（775）BInP基础上制造，展示了第一个1.3微米范围内的自组织QWR发射。

High-density and highly uniform GaAs/(GaAs)ィイD24ィエD2(AlAs)ィイD22ィエD2 self-organized quantum wires (QWRs) formed on (775)B GaAs substrates were applied to laser diodes (wavelength of 0.7 μm). Self-organized (775)B InGaAs/(GaAs)ィイD2mィエD2(AlAs)ィイD2nィエD2 pseudomorphic QWRs and InGaAs/InAlAs QWRs were fabricated for longer wavelength light emission.1. High-density GaAs QWR lasers on the (775)B GaAs substratesGraded-index separate-confinement heterostructure lasers with the high-density GaAs/(GaAs)ィイD24ィエD2(AlAsィイD2)2ィエD2 QWRs in an active region were fabricated on (775)B GaAs substrates. The (775)B QWR lasers showed laser oscillation at room temperature (20 ℃) under pulse current. The threshold current density was as low as 3 kA/cmィイD12ィエD1. This is the first report for self-organized QWR. Lasers fabricated with the use of naturally formed surface (or interface) corrugation, which indicates their excellent optical properties.2. InィイD20.15GィエD2aィイD20.85ィエD2 As/GaAs QWRs grown on (553)A, and (221)A GaAs substratesSurface corrugation with a period of 20 nm and a height of 1.5 nm of an InィイD20.15ィエD2GaィイD20.85ィエD2As layer grown on the (553)A and (221)A GaAs substrates was used to form QWRs. The emission peak wavelengths of the (553)A and (221)A In0.15Ga0.85As/GaAs QWRs were longer than 860 nm. A full width at half maximum (FWHM) of the photoluminescence (PL) was as low as 7.8 meV, which is the smallest for self-organized QWRs.3. InGaAs QWRs on (775)B GaAs substrates.InィイD20.1ィエD2GaィイD20.9ィエD2As/(GaAs)ィイD26ィエD2(AlAs)ィイD21ィエD2 QWRs with an emission wavelength of 830 nm, a polarization degree of 0.1 and PL - FWHM = 12 meV were fabricated.4. InGaAs/InAlAs QWR structures on (775)B InP substratesInGaAs/InAlAs QWRS lattice-matched to (775)B InP substrates was fabricated, which exhibited the first 1.3 μm range light emission for self-organized QWRs.