High density InGaAs/AlGaAs quantum wires on (775)B GaAs substrates

High-density and highly uniform GaAs/(GaAs) - D24 - D2(AlAs) - D22 - D2 self-organized quantum wires（QWRs）格式on (775)B GaAs substrates were applied to laser diodes (wavelength of 0.7 μm).Self-organized (775)B InGaAs/(GaAs) - D2m - D2(AlAs) - D2n - D2 pseudomorphic QWRs and InGaAs/InAlAsQWRs were fabricated for longer wavelength light emission.1. High-density GaAs QWR lasers on the（775） bgaas substratesGraded-index separate-confinement heterostructure lasers with the high-densityGaAs/(GaAs) - D24 - D2(AlAs - D2) - 2qwrs in an active region were fabricated on (775)B - GaAssubstrates. The (775)B QWR lasers showed laser oscillation at room temperature（20℃）under pulsecurrent. The threshold current density was as low as 3ka /cm D12 This is The first report forself-organized QWR. Lasers fabricated with the use of naturally formed surface （or interface）corrugation,which indicates their excellent optical properties.2. In D .15G D . 2a D .85 D . D2 As/GaAs QWRsgrown on (553)A，（221）A GaAs substratesSurface corrugation with A period of 20 nm and A height of 1.5 nm of anIn d20.15 D2Ga D2As layer grown on the (553)A and (221)A GaAs substrates was used to formQWRs. The emission peak wavelengths of The (553)A and (221)A In0.15Ga0.85As/GaAs QWRs were longerthan 860 nm. A full width at half maximum (FWHM) of the photoluminescence (PL) was as low as 7.8mev,3. InGaAs QWRs on (775)B GaAssubstrates.In - d20 .1 - D2Ga - d20 .9 - D2As/(GaAs) - D26 - D2(AlAs) - D21 - D2 QWRs with an emissionwavelength of 830 nm，a polarization degree of 0.1 and PL - FWHM = 12 meV were fabricated.4. InGaAs/InAlAs QWR结构on (775)B InP substratesInGaAs/InAlAs QWRS lattice-matched to (775)B InP substrates was fabricated，which exhibited the first 1.3 μm range light emission for self-organized QWRs

High-density and highly uniform GaAs/(GaAs)ィイD24ィエD2(AlAs)ィイD22ィエD2 self-organized quantum wires (QWRs) formed on (775)B GaAs substrates were applied to laser diodes (wavelength of 0.7 μm). Self-organized (775)B InGaAs/(GaAs)ィイD2mィエD2(AlAs)ィイD2nィエD2 pseudomorphic QWRs and InGaAs/InAlAs QWRs were fabricated for longer wavelength light emission.1. High-density GaAs QWR lasers on the (775)B GaAs substratesGraded-index separate-confinement heterostructure lasers with the high-density GaAs/(GaAs)ィイD24ィエD2(AlAsィイD2)2ィエD2 QWRs in an active region were fabricated on (775)B GaAs substrates. The (775)B QWR lasers showed laser oscillation at room temperature (20 ℃) under pulse current. The threshold current density was as low as 3 kA/cmィイD12ィエD1. This is the first report for self-organized QWR. Lasers fabricated with the use of naturally formed surface (or interface) corrugation, which indicates their excellent optical properties.2. InィイD20.15GィエD2aィイD20.85ィエD2 As/GaAs QWRs grown on (553)A, and (221)A GaAs substratesSurface corrugation with a period of 20 nm and a height of 1.5 nm of an InィイD20.15ィエD2GaィイD20.85ィエD2As layer grown on the (553)A and (221)A GaAs substrates was used to form QWRs. The emission peak wavelengths of the (553)A and (221)A In0.15Ga0.85As/GaAs QWRs were longer than 860 nm. A full width at half maximum (FWHM) of the photoluminescence (PL) was as low as 7.8 meV, which is the smallest for self-organized QWRs.3. InGaAs QWRs on (775)B GaAs substrates.InィイD20.1ィエD2GaィイD20.9ィエD2As/(GaAs)ィイD26ィエD2(AlAs)ィイD21ィエD2 QWRs with an emission wavelength of 830 nm, a polarization degree of 0.1 and PL - FWHM = 12 meV were fabricated.4. InGaAs/InAlAs QWR structures on (775)B InP substratesInGaAs/InAlAs QWRS lattice-matched to (775)B InP substrates was fabricated, which exhibited the first 1.3 μm range light emission for self-organized QWRs.