High density InGaAs/AlGaAs quantum wires on (775)B GaAs substrates

(775)B GaAs 衬底上的高密度 InGaAs/AlGaAs 量子线

• 批准号: 09450130
• 负责人: HIYAMIZU Satoshi
• 金额: $ 8.83万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450130/
• 关键词: self-organized quantum wire; GaAs quantum wire; InGaAs quantum wire; MBE growth; (775)B GaAs substrate; (553)A GaAs substrate; (221)A GaAs substrate

High-density and highly uniform GaAs/(GaAs)ィイD24ィエD2(AlAs)ィイD22ィエD2 self-organized quantum wires (QWRs) formed on (775)B GaAs substrates were applied to laser diodes (wavelength of 0.7 μm). Self-organized (775)B InGaAs/(GaAs)ィイD2mィエD2(AlAs)ィイD2nィエD2 pseudomorphic QWRs and InGaAs/InAlAs QWRs were fabricated for longer wavelength light emission.1. High-density GaAs QWR lasers on the (775)B GaAs substratesGraded-index separate-confinement heterostructure lasers with the high-density GaAs/(GaAs)ィイD24ィエD2(AlAsィイD2)2ィエD2 QWRs in an active region were fabricated on (775)B GaAs substrates. The (775)B QWR lasers showed laser oscillation at room temperature (20 ℃) under pulse current. The threshold current density was as low as 3 kA/cmィイD12ィエD1. This is the first report for self-organized QWR. Lasers fabricated with the use of naturally formed surface (or interface) corrugation, which indicates their excellent optical properties.2. InィイD20.15GィエD2aィイD20.85ィエD2 As/GaAs QWRs grown on (553)A, and (221)A GaAs substratesSurface corrugation with a period of 20 nm and a height of 1.5 nm of an InィイD20.15ィエD2GaィイD20.85ィエD2As layer grown on the (553)A and (221)A GaAs substrates was used to form QWRs. The emission peak wavelengths of the (553)A and (221)A In0.15Ga0.85As/GaAs QWRs were longer than 860 nm. A full width at half maximum (FWHM) of the photoluminescence (PL) was as low as 7.8 meV, which is the smallest for self-organized QWRs.3. InGaAs QWRs on (775)B GaAs substrates.InィイD20.1ィエD2GaィイD20.9ィエD2As/(GaAs)ィイD26ィエD2(AlAs)ィイD21ィエD2 QWRs with an emission wavelength of 830 nm, a polarization degree of 0.1 and PL - FWHM = 12 meV were fabricated.4. InGaAs/InAlAs QWR structures on (775)B InP substratesInGaAs/InAlAs QWRS lattice-matched to (775)B InP substrates was fabricated, which exhibited the first 1.3 μm range light emission for self-organized QWRs.

在（775）B GaAs衬底上形成高密度、高度均匀的GaAs/(GaAs) D2(AlAs) D2自组织量子线（qws），应用于波长为0.7 μm的激光二极管。自组织(775)B InGaAs /(砷化镓)ィイD2mィエD2(唉)ィイD2nィエD2假象QWRs和InGaAs / InAlAs QWRs捏造了长波长光emission.1。（775）B GaAs衬底上的高密度GaAs QWR激光器在（775）B GaAs衬底上制备了在有源区具有高密度GaAs/(GaAs) φ 24 φ D2(AlAs φ D2) φ 2 φ D2 QWR的梯度指数独立约束异质结构激光器。（775）B QWR激光器在室温（20℃）脉冲电流作用下出现激光振荡。阈值电流密度低至3 kA/cm。这是关于自组织QWR的第一份报告。利用自然形成的表面（或界面）波纹制成的激光器，这表明它们具有优异的光学性能。在ィイD20.15GィエD2aィイD20.85ィエD2 /砷化镓QWRs生长在(553年),和(221)砷化镓substratesSurface起皱与一段20 nm和高度的1.5 nm的ィイD20.15ィエD2GaィイD20.85ィエD2As层上生长(553)和(221)砷化镓基板被用来QWRs形式。在0.15 ga0.85 as /GaAs qws中（553）A和（221）A的发射峰波长均大于860 nm。光致发光（PL）的半最大值全宽度（FWHM）低至7.8 meV，是自组织qwr中最小的。InGaAs QWRs (775) B砷化镓substrates.InィイD20.1ィエD2GaィイD20.9ィエD2As /(砷化镓)ィイD26ィエD2(唉)ィイD21ィエD2 QWRs发射波长830 nm,极化程度的0.1和PL -应用= 12 fabricated.4兆电子伏。在（775）B InP衬底上制备了与（775）B InP衬底匹配的InGaAs/InAlAs QWRS晶格，显示出自组织QWRS的第一个1.3 μm范围的发光。

项目成果

M.Higashiwaki: "Self-organized GaAs quantum-wire lasers grown on(775)B-oriented GaAs substrates by molecular beam epitaxy" Apl.Phys.Lett.74. 780-782 (1999)

M.Higashiwaki：“通过分子束外延在 (775)B 取向 GaAs 衬底上生长的自组织 GaAs 量子线激光器”Apl.Phys.Lett.74。

M.Higashiwaki: "Self-organized GaAs quantum-wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy"Appl.Phys.Lett.. 74. 780-782 (1999)

M.Higashiwaki：“通过分子束外延在 (775)B 取向 GaAs 基板上生长的自组织 GaAs 量子线激光器”Appl.Phys.Lett.. 74. 780-782 (1999)

S.Hiyamizu: "Hi-density In_<0.14>Ga_<0.86>As/(GaAs)_5(AlAs)_5 quantum wires naturally formed on (775)B-oriented GaAs substrates by molecular beam epitaxy" Materials Science and Engineering B. (未定). (1998)

S. Hiyamizu：“通过分子束外延在 (775)B 取向的 GaAs 基板上自然形成高密度 In_<0.14>Ga_<0.86>As/(GaAs)_5(AlAs)_5 量子线”材料科学与工程 B。 （待定）（1998）。

M. Higashiwaki: "Temperature dependence of photoluminescence from high-density GaAs/(GaAs)ィイD24ィエD2(AlAs)ィイD22ィエD2 quantum wires grown on (775) B-oriented GaAs substrates by molecular beam epitaxy"Physica E. 2. 959-963 (1998)

M. Higashiwaki：“通过分子束外延生长在 (775) B 取向 GaAs 衬底上的高密度 GaAs/(GaAs)D24D2(AlAs)D22D2 量子线的光致发光的温度依赖性”Physica E. 2. 959-963 (1998) ）

M.Higashiwaki: "Temperature dependence of photoluminescence from high-density GaAs/(GaAs)_4(AlAs)_2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy" Physica E. (未定). (1998)

M. Higashiwaki：“通过分子束外延在 (775)B 取向 GaAs 基板上生长的高密度 GaAs/(GaAs)_4(AlAs)_2 量子线的光致发光的温度依赖性”Physica E. (1998)。