权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Supwe-flat (411) A hetero.

Supwe-平 (411) 异性恋。

基本信息

批准号：
06402040
负责人：
HIYAMIZU Satoshi
金额：
$ 18.18万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (A)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06402040/
关键词：
411 (A)GaAs AlGaAd quantum wells AlAs resonant tunneling diodes InGaAs AlGaAs quantum wells InAlAs quantum wells Stokes shift Full-width at half maximum of excitonic absorption Negative differential resistance AlAs 共鳴トンネルダイオード lnGaA

项目摘要

We have investigated properties of (411) A super-flat interfaces [atomically flat interfaces over a macroscopic area (1 cm x 1 cm)] not only in GaAs/AlGaAsheterostructures on GaAs substrates but also in other III-V systems such as pseudomorphic InGaAs/AlGaAs heterostructures on GaAs substrates and InGaAs/InAlAs heterostructurs lattice-matched to InP substrates grown by molecular beam epitaxy (MBE).We achieved the (411) A super-flat interfaces in GaAs/Al_xGa_<1-x>As quantum wells (QWs) with high Al content (x=0.3-1) by optimizing MBE growth conditions. Furthermore, GaAs/AlGaAs double barrier resonant tunneling (DBRT) structures were grown on (411) A GaAs substrate as an application of (411) A super-flat interfaces to quantum effect devices, and we obtained excellent device performance of much improved peak-to-valley current ratio compared with a conventional (100) GaAs/AlGaAs DBRT structure. Next, we realized the (411) A super-flat interfaces in pseudomorphic In_xGa_<1-x>As/Al_<0.3>Ga_<0.7>As QWs with In content of x=0-0.08 grown on (411) GaAs substrates. In the study of (411) A InGaAs/InAlAs QW structures lattice-matched to InP substrates, we obtained high crystal quality of In_<O.53>Ga_<0.47>As films grown on (411) A InP substrates, but we could not observeexcellent optical properties of (411) A In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As QWs with the super-flat interfaces because of rather low crystal quality of In_<0.52>Al_<0.48>As barriers. By further optimizing MBE growth conditions for (411) A InGaAs/In AlAs QWs, we expect to obtain the (411) A super-flat interfaces in the InGaAs/InAlAs system lattice-matched InP substrates.In summary, we studied properties of the (411) A super-flat interfaces in III-V semiconductor heterostructures and showed their high potential for applications to quantum effect devices.

我们研究了(411)A超平坦界面[宏观区域(1 cm×1 cm)原子平坦界面]的性质，不仅在GaAs衬底上的GaAs/AlGaAs异质结中，而且在其他III-V系统中也进行了研究，例如在GaAs衬底上的赝形InGaAs/AlAs异质结以及与InP衬底晶格匹配的InGaAs/InAlAs异质结。通过优化分子束外延生长条件，我们在GaAs/Al_xGa_(？)此外，作为(411)A超平界面在量子效应器件中的应用，在(411)A衬底上生长了GaAs/AlGaAs双势垒共振隧穿(DBRT)结构，并获得了与传统的(100)GaAs/AlGaAsDBRT结构相比有较大改善的峰谷电流比的优异器件性能。接下来，我们在(411)In_xGa_&lt；1-x&gt；As/Al_&lt；0.3&gt；Ga_&lt；0.7&gt；As衬底上实现了In含量x=0-0.08的赝形GaAsQW中的(411)A超平界面。在与InP衬底晶格匹配的(411)A InGaAs/InAlAs量子阱结构的研究中，我们获得了高质量的In_&lt；0.53&Gt；Ga_&lt；0.47&gt；As薄膜，但没有观察到(411)A In_&lt；0.53&gt；Ga_&lt；0.47&gt；As/In_&lt；0.52&gt；Al_&lt；0.48&gt；良好的光学性能由于In_(0.52)Al_(0.48)作为势垒晶体质量较低，形成了具有超平坦界面的量子阱。通过进一步优化分子束外延生长(411)A InGaAs/In AlAs量子阱的条件，我们有望在InGaAs/InAlAs系统晶格匹配的InP衬底上获得(411)A超平界面。综上所述，我们研究了III-V半导体异质结中(411)A超平界面的性质，展示了它们在量子效应器件中的应用潜力。