Supwe-flat (411) A hetero.

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We have investigated properties of (411) A super-flat interfaces [atomically flat interfaces over a macroscopic area (1 cm x 1 cm)] not only in GaAs/AlGaAsheterostructures on GaAs substrates but also in other III-V systems such as pseudomorphic InGaAs/AlGaAs heterostructures on GaAs substrates and InGaAs/InAlAs heterostructurs lattice-matched to InP substrates grown by molecular beam epitaxy (MBE).We achieved the (411) A super-flat interfaces in GaAs/Al_xGa_<1-x>As quantum wells (QWs) with high Al content (x=0.3-1) by optimizing MBE growth conditions. Furthermore, GaAs/AlGaAs double barrier resonant tunneling (DBRT) structures were grown on (411) A GaAs substrate as an application of (411) A super-flat interfaces to quantum effect devices, and we obtained excellent device performance of much improved peak-to-valley current ratio compared with a conventional (100) GaAs/AlGaAs DBRT structure. Next, we realized the (411) A super-flat interfaces in pseudomorphic In_xGa_<1-x>As/Al_<0.3>Ga_<0.7>As QWs with In content of x=0-0.08 grown on (411) GaAs substrates. In the study of (411) A InGaAs/InAlAs QW structures lattice-matched to InP substrates, we obtained high crystal quality of In_<O.53>Ga_<0.47>As films grown on (411) A InP substrates, but we could not observeexcellent optical properties of (411) A In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As QWs with the super-flat interfaces because of rather low crystal quality of In_<0.52>Al_<0.48>As barriers. By further optimizing MBE growth conditions for (411) A InGaAs/In AlAs QWs, we expect to obtain the (411) A super-flat interfaces in the InGaAs/InAlAs system lattice-matched InP substrates.In summary, we studied properties of the (411) A super-flat interfaces in III-V semiconductor heterostructures and showed their high potential for applications to quantum effect devices.