Defect detection and structure analysis in silica thin films by use of photoluminescence

Amorphous silica，a key material in the modern high-tech society.Is widely used as an insulating layer for a semiconductor device or as an optical fiber。In the present research，the effects of point defects such as impurities or vacaancies in the silica film on the electrical and optical properties have been systematically studied.The point defects were detected by photoluminescence，ESR，FT-IR，visible-VUV absorption，EPMA and SIMS.Electrical properties are examined by high-field conduction.Dielectric breakdown，and C-V measurement。Knowledge on the presence of oxygen vacancy and the estimation of its concentration，structural stabilization by impurity doping，and the relation between the defect concentration and the synthesis method has been obtained.In1997，we demonstrated tha clear photoluminescence can be obtained in this amorphous SiO ei D22文件D2 film by using an intense photon source such as an excimer laser or synchrotron radiation.This indicates that photoluminescence can…More be a strong tool to detect point defects in a-SiO I D 22 I D 2.Using this method，point defects in thermal silicon dioxide and SIMOX buried oxide and those induced in these oxides by ion implantation and heat treatment have been detected.The structures of these defects have also been identified。In1998，researches were extended to fluorine-doped SiO I D22 ii D2 film，SIMOX oxide，and silicon nitride film，and the structures of point defects in these materials were clarified.The effect of point defects on the dielectric strength was also examined by measuring the breakdown voltage。In1999，researches were further extended to a-SiN I D2x文件D2a-SiO-D2x文件D2N文件D2y文件D2，and Ta文件D22文件D2O文件D25文件D 2films，focusing on the effects of ion implantation and heat treatment on the concentration of point defects.Photochemical reactions responsible for the formation of optical fiber grating in Ge-doped silica glass have been also clarified.Furthermore，stable and high-efficient fabrication method of optical fiber grating by use of ion implantation has bee proposed.Less：Less

Amorphous silica, a key material in the modern high-tech society. Is widely used as an insulating layer for a semiconductor device or as an optical fiber. In the present research, the effects of point defects such as impurities or vacaancies in the silica film on the electrical and optical properties have been systematically studied. The point defects were detected by photoluminescence, ESR, FT-IR, visible-VUV absorption, EPMA and SIMS. Electrical properties are examined by high-field conduction. Dielectric breakdown, and C-V measurement. Knowledge on the presence of oxygen vacancy and the estimation of its concentration, structural stabilization by impurity doping, and the relation between the defect concentration and the synthesis method has been obtained. In 1997, we demonstrated tha clear photoluminescence can be obtained in this amorphous SiOィイD22ィエD2 film by using an intense photon source such as an excimer laser or synchrotron radiation. This indicates that photoluminescence can … More be a strong tool to detect point defects in a-SiOィイD22ィエD2. Using this method, point defects in thermal silicon dioxide and SIMOX buried oxide and those induced in these oxides by ion implantation and heat treatment have been detected. The structures of these defects have also been identified. In 1998, researches were extended to fluorine-doped SiOィイD22ィエD2 film, SIMOX oxide, and silicon nitride film, and the structures of point defects in these materials were clarified. The effect of point defects on the dielectric strength was also examined by measuring the breakdown voltage. In 1999, researches were further extended to a-SiNィイD2xィエD2 a-SiOィイD2xィエD2NィイD2yィエD2, and TaィイD22ィエD2OィイD25ィエD2 films, focusing on the effects of ion implantation and heat treatment on the concentration of point defects. Photochemical reactions responsible for the formation of optical fiber grating in Ge-doped silica glass have been also clarified. Furthermore, stable and high-efficient fabrication method of optical fiber grating by use of ion implantation has bee proposed. Less