Quinas Technology Ltd. - Commercialising ULTRARAM computer memory
Quinas Technology Ltd. - Commercialising ULTRARAM computer memory
批准号:
10078273
负责人:
金额:
$37.77万
依托单位国家:
英国
项目类别:
Collaborative R&D
财政年份:
2023
资助国家:
英国
项目状态:
未结题
起止时间:
2023 至 --
中文摘要
点击翻译按钮获取中文摘要
英文摘要
Digital electronics underpins mobile, personal and cloud computing. It comprises digital logic, built up to astonishing levels of complexity in processors, and memory. Memory is the larger in market size ($167bn) and is utterly dominated (96%) by dynamic random-access memory (DRAM) and flash. DRAM is the main or working memory in computing. Its data can be changed very quickly, and an almost unlimited number of times (high endurance), but it is volatile, meaning that without power information is lost. Indeed, even when powered DRAM must be continually refreshed; 'dynamic' is a euphemism for forgetful! Flash has completely opposite characteristics. It is non-volatile, storing data in a solid-state drive or a USB stick you can carry around. However, flash's robust storage of data makes it more difficult to write and erase; it is slow and easily wears out (low endurance). DRAM and flash's roles in memory make the most of their advantages, whilst their disadvantages are mitigated by background processes hidden from the user. An ideal, 'universal' memory would combine all the advantages of DRAM and flash, without any of their disadvantages. Due to the contradictory properties that such a memory must possess, i.e., have robustly stored data that can easily be changed, it was widely thought to be unachievable.ULTRARAM is a remarkable, patented, memory technology developed by Lancaster University that successfully combines the attributes of universal memory. Exploitation of a quantum-mechanical process called resonant tunnelling allows ULTRARAM to deliver non-volatility with fast and energy-efficient write and erase, resulting in high endurance. ULTRARAM has the non-volatility of flash, with a performance that is expected to exceed that of DRAM. In this project, Quinas Technology, a recently formed spinout from Lancaster University, with a CEO that is an entrepreneur with over 30 years' experience in the semiconductor industry, will lay the technical and commercial foundations for industrial exploitation of ULTRARAM. We will advance the technology by Moore's-law-style shrinking of individual devices (single memory bits), test their characteristics using highly-specialist equipment, refine their properties using world-leading modelling expertise, and predict the performance of multibit arrays. The technical and commercial work in the project will facilitate significant seed investment that will launch Quinas as a commercial enterprise that will disrupt and transform the memory industry, reaping substantial economic benefit for the UK and helping to achieve net-zero carbon emissions through energy efficient computing.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
国内基金
海外基金
登录
查看更多内容
Intelligent Patent Analysis for Optimized Technology Stack Selection:Blockchain BusinessRegistry Case Demonstration
-
批准号:--
-
项目类别:外国学者研究基金项目
-
资助金额:--
-
批准年份:2024
-
负责人:USHARANI HAREESH GOVINDARA JAN
-
依托单位:
Capture and Release of Droplets Using Advanced Materials for High Technology Applications
-
批准号:52073127
-
项目类别:面上项目
-
资助金额:58.0万元
-
批准年份:2020
-
负责人:Alidad Amirfazli
-
依托单位:
Journal of Computer Science and Technology
-
批准号:61224001
-
项目类别:专项基金项目
-
资助金额:20.0万元
-
批准年份:2012
-
负责人:万晓霰
-
依托单位:
Journal of Materials Science & Technology
-
批准号:51024801
-
项目类别:专项基金项目
-
资助金额:24.0万元
-
批准年份:2010
-
负责人:罗东
-
依托单位:
Journal of Computer Science and Technology
-
批准号:61040017
-
项目类别:专项基金项目
-
资助金额:4.0万元
-
批准年份:2010
-
负责人:万晓霰
-
依托单位: