A Feasibility Study for the Development of GaN - based High Frequency RF Devices

英国拥有一些世界领先的微波系统设计师，以及一些领先的氮化镓基射频器件测试和表征专业知识，但它没有利用这一点，也没有主权或可访问的工业制造能力。这些设备是许多空间系统、军事通信和制导系统的基础，在即将到来的“5G”通信革命中至关重要。为了充分利用英国的专业知识，并在先进的通信技术方面提供世界级的战略主权能力，CSC有限公司正在领导这个可行性项目，以开发一种基本的射频碳化硅（SiC）上的氮化镓（GaN）结构，该结构可以被纳入所谓的Ka波段（26.5-40.0GHz）通信频率及以上的高电子迁移率晶体管（HEMT）。该可行性项目的最终目标是使合作者能够进入价值3.5亿美元的快速增长的GaN基RF市场，预计到2022年将增长到7.5亿美元。

The UK has some of the world's leading designers of microwave systems and some of the leading test and characterising expertise for gallium nitride - based RF devices but it does not capitalise on this and has no sovereign or accessible industrial manufacturing capability. These devices are fundamental to many space systems, military communication and guidance systems and will be essential in the roll out of the upcoming "5G" communications revolution. To capitalise on the UK's expertise and to provide a world class strategic sovereign capability in advanced communications technology, the CSC Ltd is leading this feasibility project to develop a base-line RF gallium nitride (GaN) on silicon carbide (SiC) structure that can be incorporated into a high electron mobility transistors (HEMTs) for the so called Ka-band (26.5–40.0GHz) of communication frequencies and beyond. The outcomes from this feasibility project are ultimatelay targeted at enabling the collaborators to access the rapidly growing GaN - based RF markets worth $350M and forecast to grow to $750M by 2022.