GaAs-based vertical-cavity surface-emitting lasers with GaSb quantum rings (QRVCSELs)

具有 GaSb 量子环的 GaAs 垂直腔表面发射激光器 (QRVCSEL)

• 批准号: 103444
• 金额: $ 32.55万
• 依托单位: IQE PLC
• 依托单位国家: 英国
• 项目类别: Collaborative R&D
• 财政年份: 2018
• 资助国家: 英国
• 起止时间: 2018 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=103444
• 关键词: GaAs; based; vertical; cavity; surface

Vertical-cavity surface-emitting lasers (VCSELs) are small, fast, cheap lasers with a low-divergence circular-beam profile. They are ideally suited for sending signals down the optical fibres that are used to carry the vast amounts of information that we take for granted every day. VCSELs are already widely available for generating light in 600 to 1100 nm range for datacoms applications, e.g. relaying information around a datacentre, but, because of the distributed Bragg reflector (DBR) technology that is the key to their operation, they are invariably GaAs-based. This has limited their use in telecoms applications, which requires longer wavelengths (1260 nm to 1675 nm): it has proven difficult to generate a GaAs-based active region that emits at telecoms wavelengths. In this feasibility study we will assess the potential for commercially-viable, GaAs-based VCSELs, that can operate cooler-free at high-speed and at telecoms wavelengths, by exploiting the novel self-assembled GaSb quantum ring technology developed in Lancaster in the active region of the device.

垂直腔体发射激光器（VCSEL）是小的，快速，廉价的激光器，具有低差圆形梁曲线。它们非常适合在光纤下发送信号，这些光纤被用来携带我们每天都认为我们获取的大量信息。 VCSEL已广泛可用于在600至1100 nm范围内生成数据，例如，例如围绕数据中心传达信息，但是由于分布式的Bragg反射器（DBR）技术是其操作的关键，因此它们总是基于GAAS的。这限制了它们在电信应用中的使用，该应用需要更长的波长（1260 nm至1675 nm）：事实证明，很难生成基于GAA的活性区域，该区域在电信波长下排放。在这项可行性研究中，我们将通过利用新型的自我组装的自组装GASB量子环技术在设备的活动区域中开发的新型自组装量量子环技术来评估可以在高速和电信波长下无凉的商业可行的VCSEL的潜力。