GaAs-based vertical-cavity surface-emitting lasers with GaSb quantum rings (QRVCSELs)

具有 GaSb 量子环的 GaAs 垂直腔表面发射激光器 (QRVCSEL)

• 批准号: 103444
• 金额: $ 32.55万
• 依托单位: IQE PLC
• 依托单位国家: 英国
• 项目类别: Collaborative R&D
• 财政年份: 2018
• 资助国家: 英国
• 起止时间: 2018 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=103444
• 关键词: GaAs; based; vertical; cavity; surface

Vertical-cavity surface-emitting lasers (VCSELs) are small, fast, cheap lasers with a low-divergence circular-beam profile. They are ideally suited for sending signals down the optical fibres that are used to carry the vast amounts of information that we take for granted every day. VCSELs are already widely available for generating light in 600 to 1100 nm range for datacoms applications, e.g. relaying information around a datacentre, but, because of the distributed Bragg reflector (DBR) technology that is the key to their operation, they are invariably GaAs-based. This has limited their use in telecoms applications, which requires longer wavelengths (1260 nm to 1675 nm): it has proven difficult to generate a GaAs-based active region that emits at telecoms wavelengths. In this feasibility study we will assess the potential for commercially-viable, GaAs-based VCSELs, that can operate cooler-free at high-speed and at telecoms wavelengths, by exploiting the novel self-assembled GaSb quantum ring technology developed in Lancaster in the active region of the device.

垂直腔面发射激光器（VCSEL）是一种小型、快速、廉价的激光器，具有低发散度的圆形光束轮廓。它们非常适合通过光纤发送信号，这些光纤用于传输我们每天认为理所当然的大量信息。VCSEL已经广泛用于产生600至1100 nm范围内的光，用于电子束应用，例如在中心周围中继信息，但是，由于分布式布拉格反射器（DBR）技术是其操作的关键，因此它们总是基于GaAs。这限制了它们在电信应用中的使用，因为电信应用需要更长的波长（1260 nm至1675 nm）：事实证明，很难产生在电信波长下发射的GaAs基有源区。在这项可行性研究中，我们将评估商业上可行的，GaAs基VCSEL的潜力，可以在高速和电信波长下运行无冷却器，通过利用兰开斯特开发的新型自组装GaSb量子环技术在器件的有源区。