Development of a High-Accuracy Embedded Temperature Sensor Circuit Targeting 16 nano-meter finFET CMOS Semiconductor Technologies

针对 16 纳米 finFET CMOS 半导体技术开发高精度嵌入式温度传感器电路

• 批准号: 720545
• 金额: $ 11.82万
• 依托单位: MOORTEC SEMICONDUCTOR LIMITED
• 依托单位国家: 英国
• 项目类别: GRD Development of Prototype
• 财政年份: 2014
• 资助国家: 英国
• 起止时间: 2014 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=720545
• 关键词: Development; Accuracy; Embedded; Temperature; Sensor

Moortec Semiconductor Ltd develop on-chip monitoring circuits and intellectual property (IP)for silicon chip devices manufactured on advanced technologies used in today’s electronicproducts. Moortec plan to develop an innovative high-accuracy, reliable and testableembedded Temperature Sensor (TS) prototype IP that will measure the temperature of circuitsmanufactured on 16 nano-meter (nm) finFET advanced CMOS technology nodes. Withadvances in silicon CMOS technology and the scaling of transistor channel lengths to nanometerdimensions, the density of digital circuits per unit area of silicon has increased. Thisincrease in digital logic (or gate) density, which equates to an increase in power density, hasbecome a major contributor to the heating of System on Chip (SoC) devices manufactured onadvanced CMOS nodes. The 16nm fin-FET (fin-based Field-Effect Transistor) technology is acutting-edge technology for the manufacture of chips and Moortec’s high accuracytemperature sensor will possess features and address applications that go beyond what iscurrently commercially available to the designers and developers of semiconductor devices.The primary application for on-chip temperature monitoring is performance optimisation, onesuch scheme being Dynamic Voltage and Frequency Scaling (DVFS) where depending on thethermal conditions, system clocks and voltage supplies can be varied to optimise either thespeed of logical operations or power consumed by the device. For safety critical devices, thesilicon temperature can be measured and monitored by the system, potentially throughout thelifetime of the device, allowing algorithms to be used to avoid high temperatures and hencehigh stress to the device. The outcome of the project will be a silicon-proven 16nmtemperature sensor IP that will be licensed to SoC developers world-wide. Moortec’s aim is tobecome the primary IP vendor for on-chip PVT monitoring solutions for advanced nodesemiconductors worldwide.

Moortec半导体有限公司为当今电子产品中使用的先进技术制造的硅芯片器件开发片上监控电路和知识产权（IP）。Moortec计划开发一种创新的高精度、可靠和可测试的嵌入式温度传感器（TS）原型IP，该IP将测量在16纳米（nm）finFET先进CMOS技术节点上制造的电路的温度。随着硅CMOS技术的进步和晶体管沟道长度缩小到纳米尺寸，每单位面积硅的数字电路密度增加了。这种数字逻辑（或门）密度的增加，相当于功率密度的增加，已成为先进CMOS节点上制造的片上系统（SoC）器件发热的主要原因。16nm fin-FET（鳍片型场效应晶体管）技术是芯片制造的尖端技术，Moortec的高精度温度传感器将拥有超越目前半导体器件设计者和开发者商业可用的功能和应用。片上温度监控的主要应用是性能优化，一种这样的方案是动态电压和频率缩放（DVFS），其中取决于热条件，系统时钟和电压供应可以变化以优化逻辑操作的速度或设备消耗的功率。对于安全关键设备，硅温度可以由系统测量和监控，可能贯穿设备的整个寿命，允许使用算法来避免高温和由此对设备的高应力。该项目的成果将是一个经过硅验证的16 nm温度传感器IP，将授权给全球SoC开发人员。Moortec的目标是成为全球先进节点半导体片上PVT监控解决方案的主要IP供应商。