Engineered topological nanostructures – a new frontier in materials design

在功能材料中工程和利用畴壁和畴壁等拓扑缺陷是目前备受关注的问题。它们的意义在于为纳米电子学的基础研究和未来技术应用提供了大量迷人的现象。研究的一个前沿领域是使用这种材料的负电容纳米电子学，具有革命性的超低能电子学的前景，这将在这里发展。该项目的预期成果是用于此类应用的拓扑纳米结构的合成和设计的新概念。这些材料的利用将有利于未来纳米电子学的高效可控功能。

The aim of engineering and utilising topological defects such as domain walls and and skyrmions in functional materials is currently receiving tremendous attention. Their significance lies in a plethora of fascinating phenomena for fundamental research and future technological applications in nanoelectronics. One frontier area of research is negative capacitance nanoelectronics using such materials, carrying the prospect of revolutionizing ultralow energy electronics, which will be developed here. The project's expected outcomes are new concepts for the synthesis and design of topological nanostructures for such applications. The utilization of these materials will benefit efficient controllable functionality for future nanoelectronics.