Engineered topological nanostructures – a new frontier in materials design

在功能材料中设计和利用拓扑缺陷，如磁区壁和天区，目前正受到极大的关注。它们的意义在于为纳米电子学的基础研究和未来技术应用提供了大量令人着迷的现象。研究的一个前沿领域是使用这种材料的负电容纳米电子学，它有望给超低能电子设备带来革命性的变化，这将在这里发展。该项目的预期成果是为此类应用的拓扑纳米结构的合成和设计提供新的概念。这些材料的利用将有利于未来纳米电子学的高效可控功能。

The aim of engineering and utilising topological defects such as domain walls and and skyrmions in functional materials is currently receiving tremendous attention. Their significance lies in a plethora of fascinating phenomena for fundamental research and future technological applications in nanoelectronics. One frontier area of research is negative capacitance nanoelectronics using such materials, carrying the prospect of revolutionizing ultralow energy electronics, which will be developed here. The project's expected outcomes are new concepts for the synthesis and design of topological nanostructures for such applications. The utilization of these materials will benefit efficient controllable functionality for future nanoelectronics.