Structure and Kinetics in New Phase-Change and Ionic-Migration Memory Media

新型相变和离子迁移存储介质的结构和动力学

• 批准号: EP/G035857/1
• 负责人: Stephen Elliott
• 金额: $ 77.61万
• 依托单位: University of Cambridge
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2009
• 资助国家: 英国
• 起止时间: 2009 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FG035857%2F1
• 关键词: Structure; Kinetics; New; Phase; Change

The current industry-standard technology for non-volatile memory is Flash, involving electrons trapped on the floating gate of a MOSFET. In the near future, no further size-reduction scaling of this will be possible due to technological limitations. Two new non-volatile memory technogies are being developed to replace Flash memory; i) phase-change (PC) media, in which there is a current-induced transformation between amorphous and crystalline states of a material, each having a different electrical resistance; ii) ion-migration or programmable metallization cell (PMC) technology, in which there is a voltage-induced growth of a conducting metallic filament in a solid electrolyte between two electrodes. In both cases, the large resistance changes between 'on' and 'off' states allow binary (and potentially even more, multilevel) data to be stored in a memory cell. The aim of this project is to gain a deep theoretical and experimental understanding of the physical and chemical processes involved in data recording in such memory media, and thereby to design, and synthesize, new memory media with much improved performance.

非易失性存储器的当前行业标准技术是闪存，涉及在MOSFET的浮栅上捕获的电子。在不久的将来，由于技术限制，不可能进一步缩小规模。正在开发两种新的非易失性存储器技术来取代闪存：i）相变（PC）介质，其中在材料的非晶态和晶态之间存在电流诱导的转变，每种状态具有不同的电阻; ii）离子迁移或可编程金属化单元（PMC）技术，其中在两个电极之间的固体电解质中存在电压诱导的导电金属丝的生长。在这两种情况下，“开”和“关”状态之间的大电阻变化允许二进制（以及可能甚至更多的多级）数据存储在存储器单元中。该项目的目的是深入了解在这种存储介质中记录数据的物理和化学过程的理论和实验，从而设计和合成具有更高性能的新存储介质。

项目成果

Soft imprint lithography of a bulk chalcogenide glass

块状硫族化物玻璃的软压印光刻

• DOI: 10.1364/ome.1.000796
• 发表时间: 2011
• 期刊: Optical Materials Express
• 影响因子: 2.8
• 作者: Orava J