Study of semi-polar and non-polar nitride based structures for opto-electronic device applications
Study of semi-polar and non-polar nitride based structures for opto-electronic device applications
批准号:
EP/J001627/1
负责人:
Philip Dawson
金额:
$49.4万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2011
资助国家:
英国
项目状态:
已结题
起止时间:
2011 至 --
中文摘要
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英文摘要
Over the last 10 years gallium nitride based light emitting diodes (LEDs) have found widespread use as the active light emitting element of various optical displays, ranging from traffic lights to large area displays in, for example, sports stadia. This revolution in display technology has occurred because gallium nitride LEDs have not only the ability to generate blue and green light but also very efficiently, both of these attributes were not previously possible with other types of LED. Despite this revolutionary leap forward in display technology gallium nitride LEDs offer still further opportunities of developing not only even more efficient displays that can be used in televisions but also very efficient lighting systems, so called Solid State Lighting (SSL).At the heart of most modern televisions is a liquid crystal display unit that is capable of displaying today's high definition programs. The liquid crystal display works by either transmitting or absorbing light when an electrical signal is applied to the crystal. For this to occur the light that is shone from the back of the crystal towards the viewer has to be polarised in a particular direction, i.e. the maxima and minima that make up the light wave light lie in a particular direction. Conventional light sources, including the latest generation of LED, emit unpolarised light so to make the light suitable for use in a liquid crystal based television means that the light has to be passed through a light polariser thus rejecting approximately 50% of the emitted light. Clearly this is an inefficient system and the overall efficiency of television displays would be greatly improved if an efficient light source could emit polarised light. By growing the nitride based LEDs on new forms of template, so-called semi-polar and non-polar crystals, it is possible to fabricate polarised light sources offering us the possibility of significant energy savings. At the moment the fundamental scientific questions that govern not only how well the light is polarised but also efficiency of the light generation process are not understood. In this program we will investigate these issues by making a comprehensive study of both the materials and underlying physics that will enable the fabrication of a new generation of liquid crystal based displays for inclusion in low power consumption televisions.SSL is viewed as the most likely replacement for incandescent light bulbs and the current generation of compact fluorescent lamps. From this application alone the scale of the potential for energy saving can be judged by the following: "By 2025, SSL could reduce the global amount of electricity used for lighting by 50%. In the US alone this would alleviate the need for 133 new power stations (1000 MW each), eliminate 255 million metric tons of CO2 and save $115 billion of electricity costs." (The Promise of Solid State Lighting for General Illumination, US Department of Energy, 2000). The basis for SSL systems is that white light can produced by either using the combined output of a blue light emitting LED and a yellow light emitting phosphor or be combining the output from blue, green and red light emitting LEDs. The highest light generation efficiency achieved so far is ~70%, while in its self is a remarkably high figure for SSL to be employed in our offices requires efficiencies approaching ~90%. This step forward has so far proved impossible and it is widely believed that this is due to intrinsic reductions in the rate of light emission caused by internal electric fields. These fields can be reduced or eliminated by the growth of LEDs on semi-polar or non-polar templates. The promise of highly efficient LEDs using this methodology remains unfulfilled principally due to the difficulties of growing crystals of the required quality. We anticipate by using novel and improved methods of crystal growth that these problems can be overcome allowing the promise of SSL to be fulfilled.
期刊论文(10)
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The microstructure of non-polar a-plane (112¯0) InGaN quantum wells
非极性a面(112×0)InGaN量子阱的微观结构
DOI:
10.1063/1.4948299
发表时间:
2016
期刊:
Journal of Applied Physics
影响因子:
3.2
作者:
[Griffiths J]
通讯作者:
Griffiths J
The effect of indium concentration on the optical properties of a -plane InGaN/GaN quantum wells grown on r -plane sapphire substrates
铟浓度对r面蓝宝石衬底上生长的a面InGaN/GaN量子阱光学性能的影响
DOI:
10.1002/pssa.201001007
发表时间:
2011
期刊:
physica status solidi (a)
影响因子:
--
作者:
[Badcock T]
通讯作者:
Badcock T
The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates
位错密度和表面形貌对 r 面蓝宝石衬底上生长的 InGaN/GaN 量子阱光学性能的影响
DOI:
10.1143/jjap.50.080201
发表时间:
2011
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[Badcock T]
通讯作者:
Badcock T
Modification of carrier localization in basal-plane stacking faults: The effect of Si-doping in a -plane GaN
基面堆垛层错中载流子局域化的修改:a 面 GaN 中硅掺杂的影响
DOI:
10.1002/pssb.201100480
发表时间:
2011
期刊:
physica status solidi (b)
影响因子:
--
作者:
[Badcock T]
通讯作者:
Badcock T
Properties of surface-pit related emission in a -plane InGaN/GaN quantum wells grown on r -plane sapphire
r 面蓝宝石上生长的 a 面 InGaN/GaN 量子阱的表面凹坑相关发射特性
DOI:
10.1002/pssc.201001043
发表时间:
2011
期刊:
physica status solidi c
影响因子:
--
作者:
[Badcock T]
通讯作者:
Badcock T
共 8 条
REU Site: Scripps Structure and Function Summer Institute (SFSI)
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批准号:2150537
-
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-
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-
依托单位:
Graduate Research Fellowship Program (GRFP)
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批准号:2235200
-
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批准号:1842471
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负责人:Philip Dawson
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REU Site: Scripps' Structure and Function Summer Institute (SFSI)
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ERASynBio: Establishment of a Fully Synthetic, Mirror-Image Biological System
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Nitrides for the 21st century
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国内基金
海外基金
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