Nitrides for the 21st century

21世纪的氮化物

• 批准号: EP/H011676/1
• 负责人: Philip Dawson
• 金额: $ 44.86万
• 依托单位: University of Manchester
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2010
• 资助国家: 英国
• 起止时间: 2010 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FH011676%2F1
• 关键词: Nitrides; 21st; century

Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.

目前GtR中并没有所有资助研究的摘要。这通常是因为在提交提案时不需要摘要，但也可能是因为摘要中包含个人详细信息等敏感信息。

项目成果

Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells

InGaN/GaN 量子阱温度相关复合动力学中暗态的证据

• DOI: 10.7567/jjap.52.08jl12
• 发表时间: 2013
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Badcock T

Carrier dynamics in non-polar GaN/AlGaN quantum wells intersected by basal-plane stacking faults

基面堆垛层错相交的非极性 GaN/AlGaN 量子阱中的载流子动力学

• DOI: 10.1002/pssc.200983574
• 发表时间: 2010
• 期刊: physica status solidi c
• 作者: Badcock T

The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates

位错密度和表面形貌对 r 面蓝宝石衬底上生长的 InGaN/GaN 量子阱光学性能的影响

• DOI: 10.1143/jjap.50.080201
• 发表时间: 2011
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Badcock T

Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures

InGaN/GaN 量子阱结构中载流子重新分布过程的动力学

• DOI: 10.1002/pssc.201300481
• 发表时间: 2014
• 期刊: physica status solidi c
• 作者: Badcock T

Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures

• DOI: 10.7567/jjap.52.08jk10
• 发表时间: 2013-08
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: T. Badcock;S. Hammersley;D. Watson‐Parris;P. Dawson;M. J. Godfrey;M. Kappers;C. McAleese;R. Oliver;C. Humphreys