ULTRA-HIGH-RESOLUTION, ULTRA-SENSITIVE MULTIFUNCTIONAL BALLISTIC NANO SENSORS FOR THE SIMULTANEOUS DETECTION OF MAGNETIC, ELECTRIC AND OPTICAL FIELDS
用于同时检测磁场、电场和光学场的超高分辨率、超灵敏多功能弹道纳米传感器
基本信息
- 批准号:EP/J014699/1
- 负责人:
- 金额:$ 62.85万
- 依托单位:
- 依托单位国家:英国
- 项目类别:Research Grant
- 财政年份:2012
- 资助国家:英国
- 起止时间:2012 至 无数据
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
At macroscopic length scales, charge carriers in semiconductors can be described by diffusive transport properties and sensor concepts such as the Hall Effect are applicable. When materials are fabricated at the nanoscale, new properties emerge and quantum effects dominate. In high-mobility materials such as narrow-gap semiconductors (NGS), charge carriers exhibit ballistic properties, when device length scales are smaller than the electron mean free path. In InSb (and InAs) quantum well structures, room-temperature mobilities exceed 40,000 (and 25,000) cm2/Vs, respectively, yielding electron mean free paths in excess of 500nm, which are accessible in principle using current processing technology. Nevertheless, room-temperature ballistic effects, even in high mobility NGS have remained elusive. As a result there has been no significant exploration and exploitation of this interesting and potentially important transport regime. As a result of current funding (EPSRC EP/F067216 - EP/F065922 - end date November 2011) we have made significant theoretical and experimental developments, resulting in the demonstration of room temperature ballistic effects in NGS heterostructures. We have shown that it is possible to create collimated ballistic electrons in a simple cross-structure, which enhances the so called negative bend resistance (NBR). We have also shown that collimated NBR sensor responsivity (the change in four terminal device resistance to the perturbing field) scales with inverse device size. Remarkably, this means that there is no significant loss in sensor performance as the dimensions shrink, a highly desirable property for nanoscale electronics applications.The focus of our new proposal is to build on these considerable experimental and theoretical developments. We plan to use the NBR geometry as a natural platform to realise high sensitivity multifunctional NGS ballistic nanosensors operating at room temperature, which utilise the change in electrical resistance that results when the device is exposed to magnetic, electric and/or optical fields. As part of this vision we plan to integrate two other key device concepts that will enable the multifunctional character of the devices and boost sensitivity. The first is our discovery that in the appropriate device geometry, perturbing external fields, such as optical fields, can convert carriers from the ballistic to the diffusive regime. The second is that a metal shunt appropriately placed within the device architecture, provides a low resistance path and access to that path via a Schottky barrier is tunable via external perturbing fields. This latter property has been used to great effect in diffusive devices known as EXX sensors, which were invented by a coinvestigator and visiting academic on our proposal, Prof Stuart Solin. Apart from our own preliminary investigations, the integration of a metallic shunt in the ballistic limit, is a completely new concept and aspects such as plasmonic effects and hot carrier effects will need to be investigated. Up to this time our achievements are based on InSb heterostructures. The motivation to examine the smallest possible devices, means that the grant activities will include exploration of the properties of InAs quantum well devices. InAs offers similar room temperature mean free paths to InSb, but has attractions including lower overall resistance, the option to be more heavily doped and greater potential for tunability as far as controlling collimation because of negligible side wall depletion.The study of interface effects in the ballistic regime at room temperature is a field almost completely unexplored and because of the recognised demand for high-resolution high-sensitivity sensors for applications spanning biosensing, point of care diagnostics using magnetic bead detection, ICT, and Security, our work is timely and fits well within the EPSRC research strategic areas.
在宏观长度尺度上,半导体中的电荷载流子可以通过扩散传输特性来描述,并且诸如霍尔效应的传感器概念是适用的。当材料在纳米级制造时,新的特性出现,量子效应占主导地位。在诸如窄隙半导体(NGS)的高迁移率材料中,当器件长度尺度小于电子平均自由程时,电荷载流子表现出弹道性质。(和InAs)量子阱结构,室温迁移率超过40,000(和25,000)cm 2/Vs,产生超过500 nm的电子平均自由程,其原则上使用当前处理技术可获得。然而,即使在高迁移率的NGS中,室温弹道效应仍然难以捉摸。因此,没有对这一有趣和潜在重要的运输制度进行重大探索和利用。由于目前的资金(EPSRC EP/F067216-EP/F065922-结束日期2011年11月),我们已经取得了重大的理论和实验发展,在NGS异质结构的室温弹道效应的演示。我们已经表明,它是可能的,以创建一个简单的交叉结构,这增强了所谓的负弯曲电阻(NBR)的准直弹道电子。我们还表明,准直NBR传感器的响应度(在四个终端设备电阻的扰动场的变化)规模与设备尺寸的倒数。值得注意的是,这意味着传感器的性能不会随着尺寸的缩小而显著降低,这是纳米级电子应用非常理想的特性。我们新提案的重点是建立在这些相当大的实验和理论发展的基础上。我们计划使用NBR几何形状作为一个天然平台,以实现在室温下工作的高灵敏度多功能NGS弹道纳米传感器,该传感器利用当设备暴露于磁场,电场和/或光场时导致的电阻变化。作为这一愿景的一部分,我们计划整合其他两个关键的设备概念,这将使设备的多功能特性和提高灵敏度。首先是我们发现,在适当的设备几何形状,扰动外部领域,如光场,可以转换载体从弹道扩散制度。第二个是适当地放置在器件架构内的金属分流器提供了低电阻路径,并且经由肖特基势垒对该路径的访问是经由外部扰动场可调谐的。后一种特性在被称为EXX传感器的扩散装置中发挥了巨大作用,该传感器是由我们的合作研究者和访问学者Stuart索林教授发明的。除了我们自己的初步调查,在弹道极限的金属分流的集成,是一个全新的概念和方面,如等离子体效应和热载流子效应将需要进行调查。到目前为止,我们的成果是基于InSb异质结。研究尽可能小的器件的动机意味着资助活动将包括探索InAs量子阱器件的特性。InAs提供与InSb类似的室温平均自由路径,但具有以下优点:较低的总电阻,选择更重的掺杂和更大的可调谐性的潜力,只要控制准直,因为可以忽略的侧壁耗尽。在弹道制度在室温下的界面效应的研究是一个领域几乎完全未探索,因为公认的高分辨率高,我们的工作是及时的,非常适合EPSRC的研究战略领域。
项目成果
期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Magnetic topological lithography: Gateway to the artificial spin ice manifold
磁拓扑光刻:人造自旋冰流形的门户
- DOI:10.48550/arxiv.1704.07439
- 发表时间:2017
- 期刊:
- 影响因子:0
- 作者:Gartside J
- 通讯作者:Gartside J
A novel method for the injection and manipulation of magnetic charge states in nanostructures.
- DOI:10.1038/srep32864
- 发表时间:2016-09-12
- 期刊:
- 影响因子:4.6
- 作者:Gartside JC;Burn DM;Cohen LF;Branford WR
- 通讯作者:Branford WR
Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection
- DOI:10.1063/1.4936932
- 发表时间:2015-12
- 期刊:
- 影响因子:4
- 作者:A. Gilbertson;H. Sadeghi;V. Panchal;O. Kazakova;C. Lambert;S. Solin;L. Cohen
- 通讯作者:A. Gilbertson;H. Sadeghi;V. Panchal;O. Kazakova;C. Lambert;S. Solin;L. Cohen
High resolution InSb quantum well ballistic nanosensors for room temperature applications
适用于室温应用的高分辨率 InSb 量子阱弹道纳米传感器
- DOI:10.1063/1.4848310
- 发表时间:2013
- 期刊:
- 影响因子:0
- 作者:Gilbertson A
- 通讯作者:Gilbertson A
Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene.
- DOI:10.1038/srep30210
- 发表时间:2016-07-22
- 期刊:
- 影响因子:4.6
- 作者:Shautsova V;Gilbertson AM;Black NC;Maier SA;Cohen LF
- 通讯作者:Cohen LF
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Lesley Cohen其他文献
Spin Pumping Long-Range Spin-Triplet Currents into Superconducting Nb Through Cr/Fe Interfaces
通过 Cr/Fe 界面将长程自旋三线态电流自旋泵入超导 Nb
- DOI:
- 发表时间:
2022 - 期刊:
- 影响因子:0
- 作者:
Alex K. Chan;Murat Cubukcu;Sachio Komori;Alexander Vanstone;Juliet Thompson;Garry Perkins;Mark Blamire;Jason Robinson;Matthias Eschrig;Hidekazu Kurebayashi;Lesley Cohen - 通讯作者:
Lesley Cohen
The role of competing magnetic interactions on the abnormal expansion properties in manganese antiperovskites, Mn 3+ x A 1 (cid:0) x N ( A = Ni, Sn)
- DOI:
- 发表时间:
2020 - 期刊:
- 影响因子:0
- 作者:
Lesley Cohen - 通讯作者:
Lesley Cohen
Doing philosophy is doing its history
- DOI:
10.1007/bf00485509 - 发表时间:
1986-04-01 - 期刊:
- 影响因子:1.300
- 作者:
Lesley Cohen - 通讯作者:
Lesley Cohen
Lesley Cohen的其他文献
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{{ truncateString('Lesley Cohen', 18)}}的其他基金
Superconducting Gap Structure and Symmetry in Fe Based Superconductors
铁基超导体中的超导能隙结构和对称性
- 批准号:
EP/H040048/1 - 财政年份:2010
- 资助金额:
$ 62.85万 - 项目类别:
Research Grant
Doctoral Training Grant (DTG) to provide funding for 2 PhD studentships
博士培训补助金 (DTG) 为 2 名博士生提供资助
- 批准号:
NE/I527937/1 - 财政年份:2010
- 资助金额:
$ 62.85万 - 项目类别:
Training Grant
Doctoral Training Grant (DTG) to provide funding for 2 PhD Studentships
博士培训补助金 (DTG) 为 2 名博士生提供资助
- 批准号:
NE/H524749/1 - 财政年份:2009
- 资助金额:
$ 62.85万 - 项目类别:
Training Grant
EXTRAORDINARY MAGNETORESISTANCE NANO SENSORS - FUNDAMENTAL ISSUES AND APPLICATIONS
非凡的磁阻纳米传感器 - 基本问题和应用
- 批准号:
EP/F065922/1 - 财政年份:2008
- 资助金额:
$ 62.85万 - 项目类别:
Research Grant
Inhomogeneous magnetism and superconductivity
非均匀磁性和超导性
- 批准号:
EP/F016271/1 - 财政年份:2008
- 资助金额:
$ 62.85万 - 项目类别:
Research Grant
A Platform to Develop and Utilise Characterisation Tools for Functional Magnetic Materials
开发和利用功能磁性材料表征工具的平台
- 批准号:
EP/E016243/1 - 财政年份:2007
- 资助金额:
$ 62.85万 - 项目类别:
Research Grant
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基于Resolution算法的交互时态逻辑自动验证机
- 批准号:61303018
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- 项目类别:青年科学基金项目
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