Pulse quietening at source for higher-frequency power and signal switching

在源头进行脉冲静噪，以实现更高频率的电源和信号切换

• 批准号: EP/K021273/1
• 负责人: Bernard Stark
• 金额: $ 102.15万
• 依托单位: University of Bristol
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2013
• 资助国家: 英国
• 起止时间: 2013 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FK021273%2F1
• 关键词: Pulse; quietening; source; higher; frequency

Today's portable microelectronic systems, such as mobile telephones, require high energy efficiencies to further battery life. They also require compact electronics. Combining these two requirements poses a problem with relation to their power supplies, since it implies greater miniaturisation, high conversion efficiencies and high power densities. Using silicon-based DC/DC converters places limits on how far these improvements can go. We intend to make use of a new gallium-nitride transistor technology to develop smaller, more efficient power supplies. Specifically, we will produce a 10W power supply in this new technology, with a high voltage conversion factor, and integrate it inside a contemporary microelectronics package. The only way that this will work is to operate the new power supply at incredibly high switching frequencies (>100 MHz), which is 10-100 times faster than today's power supplies. The project then revolves around solving the challenges of: 1) how to operate such a power supply at very high frequencies; 2) how to integrate it into a small, modern, microelectronics package. We expect key challenges to be the creation of unacceptable electromagnetic emissions from the high switching speeds, and the need to accurately control the impedances of the circuit, since circuit impedances become more significant the faster one switches.We will solve the challenges by deploying an advanced version of a drive-pulse shaping technique that we call "pulse quietening", and by using modern integration techniques, including the creation of a custom chip to control the new power supply. Our method is to create several prototypes, running at increasingly high speeds, from 1MHz up to 100 MHz. We will create models and theories about the most efficient way to drive the power supply transistors and measure the outputs, as well as furthering our knowledge and application of pulse quietening.

当今的便携式微电子系统（例如移动电话）需要高能效以延长电池寿命。它们还需要紧凑的电子设备。将这两个要求结合起来会带来与电源相关的问题，因为这意味着更大的小型化、高转换效率和高功率密度。使用硅基 DC/DC 转换器限制了这些改进的进展。我们打算利用新的氮化镓晶体管技术来开发更小、更高效的电源。具体来说，我们将采用这项新技术生产具有高电压转换系数的 10W 电源，并将其集成到现代微电子封装中。实现这一点的唯一方法是以令人难以置信的高开关频率 (>100 MHz) 运行新电源，这比当今的电源快 10-100 倍。该项目围绕解决以下挑战：1）如何在非常高的频率下运行这样的电源； 2）如何将其集成到小型、现代的微电子封装中。我们预计，主要挑战是高开关速度会产生不可接受的电磁辐射，并且需要精确控制电路的阻抗，因为开关速度越快，电路阻抗就变得越大。我们将通过部署高级版本的驱动脉冲整形技术（我们称之为“脉冲静音”），并使用现代集成技术（包括创建定制芯片来控制新的芯片）来解决这些挑战。 电源。我们的方法是创建多个原型，以越来越高的速度运行，从 1MHz 到 100 MHz。我们将创建有关驱动电源晶体管和测量输出的最有效方法的模型和理论，并进一步加深我们对脉冲安静的了解和应用。

项目成果

Multi-level active gate driver for SiC MOSFETs

• DOI: 10.1109/ecce.2017.8096860
• 发表时间: 2017-10
• 期刊: 2017 IEEE Energy Conversion Congress and Exposition (ECCE)
• 作者: H. Dymond;Dawei Liu;Jianjing Wang;Jeremy J. O. Dalton;B. Stark

Stretching in Time of GaN Active Gate Driving Profiles to Adapt to Changing Load Current

延长 GaN 有源栅极驱动曲线的时间以适应不断变化的负载电流

• DOI: 10.1109/ecce.2018.8557531
• 发表时间: 2018
• 作者: Dalton J

Rapid Co-Optimisation of Turn-On and Turn-Off Gate Resistor Values in DC:DC Power Converters

DC:DC 电源转换器中开通和关断栅极电阻值的快速协同优化

• DOI: 10.1109/ecce.2018.8558406
• 发表时间: 2018
• 作者: Dymond H

Shaping the switch-node voltage waveform in a bridge-leg containing 650 V GaN HFETs, using sub-ns-resolution arbitrary waveform gate drivers

使用亚纳秒分辨率任意波形栅极驱动器塑造包含 650 V GaN HFET 的桥臂中的开关节点电压波形

• 发表时间: 2017
• 作者: J. Dalton

A new circuit topology for floating High Voltage level shifters

• DOI: 10.1109/prime.2014.6872653
• 发表时间: 2014-08
• 期刊: 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)
• 作者: Dawei Liu;S. Hollis;B. Stark